STF10NK50Z STMicroelectronics, STF10NK50Z Datasheet - Page 3

• Manufacturer Part Number: STF10NK50Z
• Description: MOSFET N-CH 500V 9A TO220FP
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STF10NK50Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 700 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 39.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 1219pF @ 25V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.55 Ohms
• Forward Transconductance Gfs (max / Min): 7 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 9 A
• Power Dissipation: 30 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 4.5A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 550mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4654-5

ELECTRICAL CHARACTERISTICS (T
Table 7: On/Off
Table 8: Dynamic
Table 9: Source Drain Diode
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
C
V
Symbol
Symbol
Symbol
I
oss eq.
R
V
V
SDM
(BR)DSS
g
t
t
I
I
I
I
C
SD
DS(on)
C
GS(th)
C
Q
d(on)
d(off)
Q
fs
RRM
RRM
DSS
GSS
I
Q
Q
2. Pulse width limited by safe operating area.
3. C
Q
SD
t
t
oss
t
t
rss
iss
rr
rr
gs
gd
r
f
(1)
g
rr
rr
(1)
V
(2)
oss eq.
DSS
(3)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
CASE
I
V
V
V
V
V
V
V
V
R
(see Figure 19)
V
V
(see Figure 22)
I
I
V
(see Figure 20)
I
V
(see Figure 20)
V
D
SD
SD
SD
DS
DS
GS
DS
GS
DS
GS
DD
DD
GS
DD
DD
G
DS
= 1 mA, V
=25°C UNLESS OTHERWISE SPECIFIED)
= 4.7
= 9 A, V
= 9 A, di/dt = 100 A/µs
= 9 A, di/dt = 100 A/µs
= Max Rating
= Max Rating, T
= ± 20 V
= V
= 10 V, I
= 15 V
= 0V, V
= 250 V, I
= 400 V, I
= 10 V
= 35 V, T
= 35 V, T
= 25 V, f = 1 MHz, V
Test Conditions
Test Conditions
Test Conditions
GS
, I
,
V
GS
DS
I
GS
D
GS
D
D
j
j
D
D
= 100 µA
= 4.5 A
= 25°C
= 150°C
= 4.5 A
= 0V to 400 V
= 0
= 0
= 10 V
= 4.5 A
= 9 A,
C
= 125 °C
GS
= 0
STP10NK50Z - STF10NK50Z
Min.
Min.
Min.
500
3
7
oss
when V
15.15
1219
Typ.
3.75
0.55
Typ.
39.2
7.42
20.7
Typ.
1.83
13.7
159
806
268
343
2.6
40
19
17
43
15
DS
increases from 0 to 80%
Max.
Max.
Max.
±10
4.5
0.7
1.6
50
36
1
9
Unit
Unit
Unit
µA
µA
µA
nC
nC
nC
µC
µC
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
V
V
S
A
A
V
A
A
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