STP95N3LLH6 STMicroelectronics, STP95N3LLH6 Datasheet - Page 5

• Manufacturer Part Number: STP95N3LLH6
• Description: MOSFET N-CH 30V 80A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP95N3LLH6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.7 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2200pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.006 Ohms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 80 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Fall Time: 23.4 ns
• Rise Time: 91 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10307-5

STx95N3LLH6
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
d(on)
d(off)
RRM
I
SD
Q
t
SD
t
t
r
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching on/off (inductive load)
Source drain diode
Parameter
Parameter
Doc ID 15228 Rev 3
V
R
Figure 12
V
R
Figure 12
I
I
di/dt = 100 A/µs,
V
Figure 14
SD
SD
DD
DD
G
G
DD
= 4.7 Ω, V
= 4.7 Ω, V
= 40 A, V
= 80 A,
Test conditions
Test conditions
= 15 V, I
= 15 V, I
= 24 V
D
D
GS
GS
GS
= 40 A,
= 40 A,
= 0
= 5 V
= 5 V
Electrical characteristics
Min.
Min.
-
-
-
-
-
Typ.
24.5
23.4
Typ.
28.6
22.8
19
91
1.6
Max.
Max.
320
1.1
80
-
-
Unit
Unit
nC
ns
ns
ns
ns
ns
5/18
A
A
V
A