IRFZ44NPBF International Rectifier, IRFZ44NPBF Datasheet - Page 4
![MOSFET N-CH 55V 49A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRFZ44NPBF
Manufacturer Part Number
IRFZ44NPBF
Description
MOSFET N-CH 55V 49A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Specifications of IRFZ44NPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
17.5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
49A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
1470pF @ 25V
Power - Max
94W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
49 A
Gate Charge, Total
63 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
94 W
Resistance, Drain To Source On
17.5 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
44 ns
Time, Turn-on Delay
12 ns
Transconductance, Forward
19 S
Voltage, Breakdown, Drain To Source
55 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.0175Ohm
Drain-source On-volt
55V
Gate-source Voltage (max)
±20V
Drain Current (max)
49A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
41 A
Mounting Style
Through Hole
Gate Charge Qg
42 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFZ44NPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFZ44NPBF
Manufacturer:
ST
Quantity:
4 410
Part Number:
IRFZ44NPBF
Manufacturer:
IR
Quantity:
20 000
1000
4
100
2500
2000
1500
1000
10
500
1
0.5
0
T = 175°C
1
J
C
C
C
V
V
iss
oss
rss
SD
1.0
DS
T = 25°C
J
, Source-to-Drain Voltage (V)
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
= 0V,
= C
= C
= C
1.5
gs
ds
gd
+ C
+ C
10
gd
gd
f = 1MHz
2.0
, C
ds
SHORTED
2.5
V
GS
= 0V
3.0
100
A
A
1000
100
10
20
16
12
1
8
4
0
1
0
T
T
Single Pulse
I
D
C
J
= 25A
= 25°C
= 175°C
OPERATION IN THIS AREA LIMITED
10
V
DS
Q , Total Gate Charge (nC)
G
, Drain-to-Source Voltage (V)
20
BY R
30
V
V
10
DS(on)
DS
DS
40
= 44V
= 28V
FOR TEST CIRCUIT
SEE FIGURE 13
www.irf.com
50
60
100µs
10ms
10µs
1ms
100
70
A
A