IRFZ44NPBF International Rectifier, IRFZ44NPBF Datasheet - Page 2
![MOSFET N-CH 55V 49A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRFZ44NPBF
Manufacturer Part Number
IRFZ44NPBF
Description
MOSFET N-CH 55V 49A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Specifications of IRFZ44NPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
17.5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
49A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
1470pF @ 25V
Power - Max
94W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
49 A
Gate Charge, Total
63 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
94 W
Resistance, Drain To Source On
17.5 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
44 ns
Time, Turn-on Delay
12 ns
Transconductance, Forward
19 S
Voltage, Breakdown, Drain To Source
55 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.0175Ohm
Drain-source On-volt
55V
Gate-source Voltage (max)
±20V
Drain Current (max)
49A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
41 A
Mounting Style
Through Hole
Gate Charge Qg
42 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFZ44NPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFZ44NPBF
Manufacturer:
ST
Quantity:
4 410
Part Number:
IRFZ44NPBF
Manufacturer:
IR
Quantity:
20 000
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
Notes:
I
I
V
∆V
R
V
g
Q
Q
Q
t
t
t
t
L
C
C
C
E
I
I
V
t
Q
t
DSS
GSS
S
on
d(on)
d(off)
f
SM
rr
r
fs
S
(BR)DSS
GS(th)
AS
SD
DS(on)
gd
iss
oss
rss
g
gs
rr
Repetitive rating; pulse width limited by
R
(BR)DSS
2
max. junction temperature. (See fig. 11)
Starting T
G
= 25Ω, I
/∆T
J
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 25°C, L = 0.48mH
AS
= 25A. (See Figure 12)
Parameter
Parameter
J
= 25°C (unless otherwise specified)
I
This is a calculated value limited to T
T
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
operation outside rated limits.
SD
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 530
150
Min. Typ. Max. Units
Min. Typ. Max. Units
2.0
–––
–––
–––
–––
–––
55
19
J
≤ 175°C
Intrinsic turn-on time is negligible (turn-on is dominated by L
≤ 25A di/d ≤ 230A/µs, V
0.058 –––
1470 –––
170
–––
––– 17.5
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
360
–––
–––
–––
7.5
63
12
60
44
45
88
–––
260
–––
–––
250
100
–––
–––
–––
–––
–––
–––
1.3
4.0
160
95
25
63
14
23
49
V/°C
mΩ
nC
nH
mJ
nC
µA
nA
ns
pF
ns
V
V
S
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
and center of die contact
V
V
I
DD
D
D
AS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
J
J
G
= 25A
= 25A
= 25°C, I
= 25°C, I
= 25A, L = 0.47mH
≤ V
= 12Ω
= 0V, I
= V
= 25V, I
= 55V, V
= 44V, V
= 20V
= -20V
= 44V
= 0V
= 25V
= 10V, I
= 10V, See Fig. 6 and 13
= 28V
= 10V, See Fig. 10
(BR)DSS
GS
J
, I
= 175°C .
D
S
F
D
D
D
= 250µA
GS
GS
Conditions
= 25A, V
= 25A
Conditions
= 250µA
,
= 25A
= 25A
= 0V
= 0V, T
D
www.irf.com
GS
= 1mA
J
= 150°C
= 0V
G
S
+L
D
S
D
)