STP75NS04Z STMicroelectronics, STP75NS04Z Datasheet
STP75NS04Z
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STP75NS04Z Summary of contents
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... Applications ■ Switching application ■ Power tools Order codes Part number STP75NS04Z June 2006 N-channel Clamped - 7mΩ - 80A - TO-220 R I DS(on) D < 11mΩ 80A Internal schematic diagram Marking P75NS04Z Rev 1 STP75NS04Z TO-220 Package Packaging TO-220 Tube 1/12 www.st.com 12 ...
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... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ STP75NS04Z . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...
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... STP75NS04Z 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage ( Gate-source voltage GS (1) Drain current (continuous Drain current (continuous Drain gate current (continuos Gate source current (continuos) GS (2) Drain current (pulsed Total dissipation at T TOT Derating factor V Gate-source ESD (HBM-C=100pF, R=1.5KΩ) ...
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... Pulsed: pulse duration=300µs, duty cycle 1.5% 4/12 Parameter Test condictions I = 1mA 16V ±10V ±100µ 10V Parameter Test condictions V =15V 25V MHz 20V (see Figure 13) STP75NS04Z Min. Typ 250µ 40A 7 Min. Typ. = 15A 50 1860 628 196 = Max. Unit V 1 µA µ mΩ Max. Unit ...
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... STP75NS04Z Table 6. Switching on/off Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time f Table 7. Source drain diode Symbol I Source-drain current SD (1) Source-drain current (pulsed) I SDM (2) Forward on Voltage Reverse recovery time rr Q Reverse recovery charge rr Reverse recovery current ...
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... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Figure 5. Normalized B VDSS 6/12 Figure 2. Figure 4. vs temperature Figure 6. STP75NS04Z Thermal impedance Transfer characteristics Static drain-source on resistance ...
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... STP75NS04Z Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature 7/12 ...
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... Test circuit Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive waveform 8/12 Figure 13. Gate charge test circuit Figure 15. Unclamped inductive load test circuit Figure 17. Switching time waveform STP75NS04Z ...
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... STP75NS04Z 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...
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... STP75NS04Z inch MIN. TYP. MAX. 0.173 0.181 0.024 0.034 0.045 0.066 0.019 0.027 0.60 0.620 0.393 0.409 0.094 0.106 0.194 0.202 0.048 0.052 ...
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... STP75NS04Z 5 Revision history Table 8. Revision history Date 06-Jun-2006 Revision 1 First release Revision history Changes 11/12 ...
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... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STP75NS04Z ...