IRLU3303PBF International Rectifier, IRLU3303PBF Datasheet - Page 4

• Manufacturer Part Number: IRLU3303PBF
• Description: MOSFET N-CH 30V 35A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU3303PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 31 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 870pF @ 25V
• Power - Max: 68W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 35A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 31mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 45 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 33 A
• Power Dissipation: 57 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 17.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLU3303PBF

1000
4
100
1600
1400
1200
1000
10
800
600
400
200
1
0.0
0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
Drain-to-Source Voltage
T = 175°C
V
C
C
C
J
V
SD
iss
oss
rss
0.5
DS
, Source-to-Drain Voltage (V)
Forward Voltage
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
= 0V,
= C
= C
= C
1.0
T = 25°C
gs
ds
J
gd
+ C
+ C
10
gd
gd
1.5
f = 1MHz
, C
ds
SHORTED
2.0
V
GS
= 0V
2.5
100
A
A
1000
100
15
12
10
9
6
3
0
1
0
1
I
Fig 6. Typical Gate Charge Vs.
T
T
Single Pulse
D
C
J
= 20A
= 25°C
= 175°C
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
Fig 8.
V
DS
Q , Total Gate Charge (nC)
10
G
, Drain-to-Source Voltage (V)
BY R
V
V
20
10
DS
DS
DS(on)
= 24V
= 15V
FOR TEST CIRCUIT
SEE FIGURE 13
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30
10µs
100µs
1ms
10ms
100
40
A
A