IRLU3303PBF International Rectifier, IRLU3303PBF Datasheet - Page 2

• Manufacturer Part Number: IRLU3303PBF
• Description: MOSFET N-CH 30V 35A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU3303PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 31 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 870pF @ 25V
• Power - Max: 68W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 35A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 31mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 45 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 33 A
• Power Dissipation: 57 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 17.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLU3303PBF


‚
ƒ
„
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
L
V
∆V
R
V
g
I
I
Q
Q
Q
t
t
t
t
L
C
C
C
I
I
V
t
Q
t
DSS
GSS
d(on)
r
d(off)
f
SM
rr
on
S
D
fs
S
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
SD
max. junction temperature. ( See fig. 11 )
g
gs
gd
rr
Repetitive rating; pulse width limited by
V
R
T
Pulse width ≤ 300µs; duty cycle ≤ 2%.
I
2
(BR)DSS
SD
J
DD
G
≤ 175°C
= 25Ω, I
≤ 20A, di/dt ≤ 140A/µs, V
= 15V, starting T
/∆T
J
AS
Internal Drain Inductance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Source Inductance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
= 20A. (See Figure 12)
J
= 25°C, L =470µH
Parameter
Parameter
DD
≤ V
(BR)DSS
,
J
= 25°C (unless otherwise specified)
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
1.0
–––
30
12
–––
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
…
†
‡
Caculated continuous current based on maximum allowable
Uses IRL3303 data and test conditions.
This is applied for I-PAK, L
0.035 –––
junction temperature;
lead and center of die contact.
Typ. Max. Units
170
–––
–––
–––
––– 0.031
––– 0.045
–––
–––
–––
–––
–––
–––
–––
–––
–––
200
7.5
870
340
–––
180
7.4
4.5
14
36
72
-100
–––
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
35 …
110
280
1.3
8.8
–––
25
26
15
140
V/°C
µA
nA
nC
nH
nC
pF
ns
ns
Ω
V
V
S
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact†
V
V
ƒ = 1.0MHz, See Fig. 5‡
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „‡
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
D
GS
DS
= 20A
= 20A
= 25°C, I
Package limitation current = 20A.
= 25°C, I
= 0.70Ω, See Fig. 10 „‡
= 6.5Ω, V
= 0V, I
= V
= 25V, I
= 30V, V
= 24V, V
= 24V
= 4.5V, See Fig. 6 and 13 „‡
= 15V
= 25V
= 10V, I
= 4.5V, I
= 16V
= -16V
= 0V
S
of D-PAK is measured between
GS
, I
D
F
S
D
D
D
= 250µA
GS
Conditions
D
Conditions
GS
GS
= 20A
= 20A, V
= 250µA
= 20A‡
= 21A „
= 17A „
= 4.5V
= 0V
= 0V, T
D
www.irf.com
= 1mA
GS
J
= 150°C
= 0V „
G
G
S
+L
D
D
S
)
S
D