IXTY64N055T IXYS, IXTY64N055T Datasheet - Page 5

• Manufacturer Part Number: IXTY64N055T
• Description: MOSFET N-CH 55V 64A TO-252
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTY64N055T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 64A
• Vgs(th) (max) @ Id: 4V @ 25µA
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Input Capacitance (ciss) @ Vds: 1420pF @ 25V
• Power - Max: 130W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.013 Ohms
• Drain-source Breakdown Voltage: 55 V
• Continuous Drain Current: 64 A
• Power Dissipation: 130 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 55
• Id(cont), Tc=25°c, (a): 64
• Rds(on), Max, Tj=25°c, (?): 0.0130
• Ciss, Typ, (pf): 1420
• Qg, Typ, (nc): 37
• Trr, Typ, (ns): 30
• Trr, Max, (ns): -
• Pd, (w): 130
• Rthjc, Max, (k/w): 1.15
• Package Style: TO-252AA (D PAK)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2006 IXYS CORPORATION All rights reserved
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80
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50
40
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30
28
26
65
60
55
50
45
40
35
30
25
20
15
10
25
t
T
V
Switching Times v s. Gate Resistance
r
J
DS
12
I
20
Switching Times v s. Drain Current
= 125ºC, V
35
D
= 27.5V
Rise Time v s. Junction Temperature
= 10A
14
Fig. 17. Resistiv e Turn-off
Fig. 15. Resistiv e Turn-on
25
45
t
d(on)
Fig. 13. Resistiv e Turn-on
16
GS
30
- - - -
55
T
I
= 10V
I
I
D
D
J
D
R
= 30A
- Degrees Centigrade
18
= 30A
G
- Amperes
35
- Ohms
65
20
40
75
T
t
R
V
J
22
f
G
DS
T
= 25ºC
J
= 18 Ω , V
45
= 27.5V
= 125ºC
85
24
I
D
t
= 10A
d(off)
50
95
26
GS
- - - -
R
V
V
= 10V
G
GS
DS
55
105
28
= 18 Ω
= 27.5V
= 10V
60
30
115
30
28
26
24
22
20
18
16
58
54
50
46
42
38
34
30
125
120
110
100
42
40
38
36
34
32
30
28
26
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80
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60
50
40
30
20
65
60
55
50
45
40
35
30
25
20
25
15
Switching Times v s. Junction Temperature
10
I
t
T
V
D
Switching Times v s. Gate Resistance
35
f
J
DS
20
= 30A
= 125ºC, V
12
R
V
V
= 27.5V
G
GS
DS
= 18 Ω
45
I
Fig. 16. Resistiv e Turn-off
D
= 27.5V
= 10V
Fig. 18. Resistiv e Turn-off
25
T
14
= 10A
J
t
Rise Time v s. Drain Current
d(off)
- Degrees Centigrade
Fig. 14. Resistiv e Turn-on
55
GS
I
30
D
- - - -
16
= 10V
= 10A
R
65
G
I
D
35
- Ohms
18
- Amperes
75
40
20
t
R
V
85
f
G
DS
= 18 Ω , V
= 27.5V
45
IXYS REF: T_64N055T (1V) 7-14-06.xls
22
95
T
T
J
J
IXTP64N055T
IXTY64N055T
= 25ºC
= 125ºC
t
d(off)
I
105
50
GS
D
24
= 30A
- - - -
= 10V
115 125
55
26
60
28
54
50
46
42
38
34
30
26
22
130
120
110
100
90
80
70
60
50
40
30
30