IXTY64N055T IXYS, IXTY64N055T Datasheet - Page 2

• Manufacturer Part Number: IXTY64N055T
• Description: MOSFET N-CH 55V 64A TO-252
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTY64N055T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 64A
• Vgs(th) (max) @ Id: 4V @ 25µA
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Input Capacitance (ciss) @ Vds: 1420pF @ 25V
• Power - Max: 130W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.013 Ohms
• Drain-source Breakdown Voltage: 55 V
• Continuous Drain Current: 64 A
• Power Dissipation: 130 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 55
• Id(cont), Tc=25°c, (a): 64
• Rds(on), Max, Tj=25°c, (?): 0.0130
• Ciss, Typ, (pf): 1420
• Qg, Typ, (nc): 37
• Trr, Typ, (ns): 30
• Trr, Max, (ns): -
• Pd, (w): 130
• Rthjc, Max, (k/w): 1.15
• Package Style: TO-252AA (D PAK)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
Values
(T
I
I
V
t
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
SM
(T
d(on)
d(off)
f
S
r
rr
IXYS reserves the right to change limits, test conditions, and dimensions.
fs
iss
oss
thJC
thCS
SD
rss
g(on)
gs
gd
J
J
TO-252 (IXTY) Outline
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
Test Conditions
V
V
V
R
V
TO-220
Test Conditions
V
Repetitive
I
I
V
F
F
DS
GS
GS
GS
GS
R
G
=25 A, V
= 25 A, -di/dt = 100 A/μs
= 18Ω (External)
= 30 V, V
= 10 V; I
= 10 V, V
= 0 V, V
= 0 V
= 10 V, V
GS
1 Anode
2 NC
3 Anode
4 Cathode
D
DS
GS
DS
= 0 V, Note 1
DS
= 0.5 I
= 25 V, f = 1 MHz
= 0 V
= 0.5 V
= 0.5 V
4,835,592
4,850,072
4,881,106
D25
, Note 1
DSS
DSS
, I
4,931,844
5,017,508
5,034,796
, I
D
D
= 10 A
= 10 A
Dim.
D1
A1
A2
b1
b2
E1
e1
L1
L2
L3
c1
A
D
E
H
b
c
e
L
5,049,961
5,063,307
5,187,117
2.19 2.38
0.89 1.14
0.64 0.89
0.76 1.14
5.21 5.46
0.46 0.58
0.46 0.58
5.97 6.22
4.32 5.21
6.35 6.73
4.32 5.21
9.40 10.42
0.51 1.02
0.64 1.02
0.89 1.27
2.54 2.92
Min. Max.
2.28 BSC
4.57 BSC
Millimeter
0 0.13
Min.
Min.
5,237,481
5,381,025
5,486,715
17
Characteristic Values
0.086
0.035
0.025
0.030
0.205
0.018
0.018
0.235
0.170
0.250
0.170
0.370
0.020
0.025
0.035
0.100
Min.
0.090 BSC
0.180 BSC
Characteristic
Inches
0
1420
Typ.
Typ.
255
0.094
0.045
0.005
0.035
0.045
0.215
0.023
0.023
0.245
0.205
0.265
0.205
0.410
0.040
0.040
0.050
0.115
0.5
Max.
28
68
19
52
37
30
37
10
11
30
6,162,665
6,259,123 B1
6,306,728 B1
Max.
Max.
1.15 °C/W
170
1.2
64
°C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
pF
pF
pF
n s
n s
n s
n s
ns
S
A
A
V
Notes:
1.
2. On through-hole packages, R
TO-220 (IXTP) Outline
The product presented herein is under
development.
tions offered are derived from data
gathered during objective characteriza-
tions of preliminary engineering lots; but
also may yet contain some information
supplied during a pre-production design
evaluation. IXYS reserves the right to
change limits, test conditions, and
dimensions without notice.
5 mm or less from the package body.
Kelvin test contact location must be
Pulse test: t ≤ 300 μs, duty cycle
6,683,344
6,710,405B2
6,710,463
d ≤ 2 %;
PRELIMINARY TECHNICAL
Pins: 1 - Gate
3 - Source 4, TAB - Drain
INFORMATION
6,727,585
6,759,692
6771478 B2
The Technical Specifica-
IXTP64N055T
IXTY64N055T
2 - Drain
7,005,734 B2
7,063,975 B2
7,071,537
DS(on)