IRFH5255TR2PBF International Rectifier, IRFH5255TR2PBF Datasheet - Page 6

• Manufacturer Part Number: IRFH5255TR2PBF
• Description: MOSFET N-CH 25V 15A 8VQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH5255TR2PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 14.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 988pF @ 13V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-VQFN
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10.9 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 15 A
• Power Dissipation: 3.6 W
• Gate Charge Qg: 7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFH5255TR2PBFTR

IRFH5255PbF
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6
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Fig 17. Gate Charge Test Circuit
1K
ƒ
+
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•
•
•
•
Fig 16.
SD
S
•
•
•
DUT
-
L
„
G
+
HEXFET
VCC
+
-
®
Re-Applied
Voltage
Power MOSFETs
Reverse
Recovery
Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
DS
Waveform
Waveform
Vgs(th)
Qgs1 Qgs2
Vds
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
for N-Channel
Fig 18. Gate Charge Waveform
Diode Recovery
Current
dv/dt
Forward Drop
di/dt
Qgd
D =
Period
P.W.
Qgodr
V
V
I
SD
GS
DD
=10V
www.irf.com
Vgs
Id