IRFH5255TR2PBF International Rectifier, IRFH5255TR2PBF Datasheet - Page 3

MOSFET N-CH 25V 15A 8VQFN

IRFH5255TR2PBF

Manufacturer Part Number
IRFH5255TR2PBF
Description
MOSFET N-CH 25V 15A 8VQFN
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFH5255TR2PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
2.35V @ 25µA
Gate Charge (qg) @ Vgs
14.5nC @ 10V
Input Capacitance (ciss) @ Vds
988pF @ 13V
Power - Max
3.6W
Mounting Type
Surface Mount
Package / Case
8-VQFN
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
10.9 mOhms
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
15 A
Power Dissipation
3.6 W
Gate Charge Qg
7 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRFH5255TR2PBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFH5255TR2PBF
Manufacturer:
IR
Quantity:
2 933
www.irf.com
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
10000
Fig 3. Typical Transfer Characteristics
1000
1000
0.01
100
100
Fig 1. Typical Output Characteristics
100
0.1
0.1
10
10
10
1
1
1.5
0.1
1
≤ 60µs
Tj = 25°C
T J = 150°C
2
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
PULSE WIDTH
2.5
2.50V
1
C iss
C rss
C oss
3
T J = 25°C
V DS = 15V
≤60µs PULSE WIDTH
f = 1 MHZ
10
3.5
10
TOP
BOTTOM
4
4.5
VGS
10V
4.50V
3.75V
3.50V
3.25V
3.00V
2.75V
2.50V
100
100
5
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
1000
Fig 4. Normalized On-Resistance Vs. Temperature
100
0.1
1.8
1.6
1.4
1.2
1.0
0.8
0.6
14
12
10
10
1
8
6
4
2
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.1
0
Fig 2. Typical Output Characteristics
I D = 15A
I D = 15A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
4
Q G , Total Gate Charge (nC)
V DS = 20V
V DS = 13V
VDS= 5.0V
2.5V
1
≤ 60µs
Tj = 150°C
8
IRFH5255PbF
PULSE WIDTH
12
TOP
BOTTOM
10
16
VGS
10V
4.50V
3.75V
3.50V
3.25V
3.00V
2.75V
2.50V
100
20
3

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