PSMN4R3-30PL,127 NXP Semiconductors, PSMN4R3-30PL,127 Datasheet - Page 4

• Manufacturer Part Number: PSMN4R3-30PL,127
• Description: MOSFET N-CH 30V 100A TO-220AB3
• Manufacturer: NXP Semiconductors

Specifications of PSMN4R3-30PL,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.3 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 41.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 12V
• Power - Max: 103W
• Mounting Type: Through Hole
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.3 mOhms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 100 A
• Power Dissipation: 103 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4897-5; 934063918127

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN4R3-30PL_1
Product data sheet
Symbol
R
Fig 3.
Fig 4.
th(j-mb)
Z
(K/W)
th (j-mb)
10
10
10
10
10
10
(A)
I
10
10
D
-1
-2
-3
-4
3
2
1
1
10
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration
-1
-6
δ = 0.5
Thermal characteristics
0.05
0.2
0.1
0.02
Parameter
thermal resistance from
junction to mounting
base
single shot
10
-5
Conditions
see
Limit R
10
-4
Figure 4
(1)
DSon
1
= V
DS
Rev. 01 — 16 June 2009
/ I
10
D
-3
10
-2
DC
N-channel 30 V 4.3 mΩ logic level MOSFET
10
10
-1
PSMN4R3-30PL
Min
-
P
t
p
V
1
Typ
1
DS
T
100 μs
1 ms
10 ms
100 ms
10 μs
(V)
δ =
© NXP B.V. 2009. All rights reserved.
t
p
(s)
003aad234
003aad296
T
t
Max
1.5
p
t
10
10
2
Unit
K/W
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