PSMN4R3-30PL,127 NXP Semiconductors, PSMN4R3-30PL,127 Datasheet - Page 3

• Manufacturer Part Number: PSMN4R3-30PL,127
• Description: MOSFET N-CH 30V 100A TO-220AB3
• Manufacturer: NXP Semiconductors

Specifications of PSMN4R3-30PL,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.3 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 41.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 12V
• Power - Max: 103W
• Mounting Type: Through Hole
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.3 mOhms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 100 A
• Power Dissipation: 103 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4897-5; 934063918127

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
PSMN4R3-30PL_1
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
DS
DGR
GS
tot
DS(AL)S
Continuous current is limited by package.
150
100
(A)
50
I
D
0
mounting base temperature
Continuous drain current as a function of
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive
drain-source avalanche
energy
(1)
50
100
Conditions
T
T
V
V
t
T
T
t
V
R
p
p
j
j
mb
mb
150
GS
GS
GS
GS
≤ 10 µs; pulsed; T
≤ 10 µs; pulsed; T
≥ 25 °C; T
≥ 25 °C; T
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
= 50 Ω; unclamped
T
003aad235
mb
(°C)
200
j
j
Rev. 01 — 16 June 2009
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
= 100 °C; see
= 25 °C; see
Figure 2
= 25 °C; I
mb
mb
= 25 °C; see
= 25 °C
GS
Fig 2.
D
= 20 kΩ
= 100 A; V
P
Figure 1
(%)
der
Figure 1
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
N-channel 30 V 4.3 mΩ logic level MOSFET
Figure 3
sup
≤ 30 V;
50
PSMN4R3-30PL
[1]
[1]
[1]
100
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
150
© NXP B.V. 2009. All rights reserved.
T
mb
Max
30
30
20
80
100
465
103
175
175
100
465
74
03aa16
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
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