IRFI9Z34GPBF Vishay, IRFI9Z34GPBF Datasheet - Page 7
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IRFI9Z34GPBF
Manufacturer Part Number
IRFI9Z34GPBF
Description
MOSFET P-CH 60V 12A TO220FP
Manufacturer
Vishay
Specifications of IRFI9Z34GPBF
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
140 mOhm @ 7.2A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
34nC @ 10V
Input Capacitance (ciss) @ Vds
1100pF @ 25V
Power - Max
42W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.14 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
12 A
Power Dissipation
42000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Continuous Drain Current Id
-12A
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
140mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Fall Time
58 ns
Rise Time
120 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFI9Z34GPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91172.
Document Number: 91172
S09-0010-Rev. A, 19-Jan-09
Re-applied
voltage
Reverse
recovery
current
+
R
-
Compliment N-Channel of D.U.T. for driver
D.U.T.
G
*
Driver gate drive
D.U.T. I
D.U.T. V
Inductor current
V
GS
P.W.
= - 5 V for logic level and - 3 V drive devices
SD
DS
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Ripple ≤ 5 %
Body diode forward drop
Period
Body diode forward
+
-
Fig. 14 - For P-Channel
• dV/dt controlled by R
• I
• D.U.T. - device under test
SD
Diode recovery
current
controlled by duty factor "D"
Circuit layout considerations
dV/dt
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
dI/dt
D =
-
G
Period
P.W.
+
IRFI9Z34G, SiHFI9Z34G
V
V
I
SD
GS
DD
= - 10 V*
+
-
V
DD
Vishay Siliconix
www.vishay.com
7