IRFI9Z34GPBF Vishay, IRFI9Z34GPBF Datasheet - Page 2
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IRFI9Z34GPBF
Manufacturer Part Number
IRFI9Z34GPBF
Description
MOSFET P-CH 60V 12A TO220FP
Manufacturer
Vishay
Specifications of IRFI9Z34GPBF
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
140 mOhm @ 7.2A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
34nC @ 10V
Input Capacitance (ciss) @ Vds
1100pF @ 25V
Power - Max
42W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.14 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
12 A
Power Dissipation
42000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Continuous Drain Current Id
-12A
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
140mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Fall Time
58 ns
Rise Time
120 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFI9Z34GPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
IRFI9Z34G, SiHFI9Z34G
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
t
t
I
I
C
R
V
C
V
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
L
t
DS
L
SM
C
I
t
t
on
DS
oss
t
SD
thJA
thJC
iss
rss
S
rr
gd
fs
gs
r
f
D
S
g
rr
/T
J
V
V
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
GS
GS
J
V
= 25 °C, I
T
DS
Intrinsic turn-on time is negligible (turn-on is dominated by L
Reference to 25 °C, I
= - 10 V
= - 10 V
J
= 25 °C, I
= - 48 V, V
V
V
V
V
V
DS
R
f = 1.0 MHz, see fig. 5
DD
TYP.
TEST CONDITIONS
DS
DS
GS
G
-
-
= - 25 V, I
= - 30 V, I
= 12 Ω
F
= - 60 V, V
= V
= 0 V, I
V
V
= - 18 A, dI/dt = 100 A/µs
f = 1.0 MHz
see fig. 10
V
GS
DS
S
I
GS
GS
D
GS
= - 12 A, V
= ± 20 V
= - 25 V,
= - 18 A, V
, I
,
= 0 V,
see fig. 6 and 13
= 0 V, T
D
R
D
D
D
D
= 250 µA
I
= 250 µA
D
= 1.5 Ω,
GS
= - 7.2 A
= - 18 A,
= - 7.2 A
b
D
= 0 V
= - 1 mA
GS
J
DS
G
= 150 °C
G
= 0 V
b
= - 48 V,
b
MAX.
D
S
b
b
D
S
3.6
65
b
MIN.
- 2.0
- 60
5.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S09-0010-Rev. A, 19-Jan-09
Document Number: 91172
- 0.060
TYP.
1100
0.28
620
100
120
100
4.5
7.5
12
18
20
58
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
± 100
MAX.
- 100
- 500
- 4.0
0.14
- 6.3
0.52
S
- 12
- 48
200
9.9
34
16
-
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
)
V/°C
nA
µA
nC
nH
µC
pF
ns
ns
V
V
Ω
S
A
V