IRF640LPBF Vishay, IRF640LPBF Datasheet - Page 7

MOSFET N-CH 200V 18A TO-262

IRF640LPBF

Manufacturer Part Number
IRF640LPBF
Description
MOSFET N-CH 200V 18A TO-262
Manufacturer
Vishay
Datasheet

Specifications of IRF640LPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
180 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
130W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
18A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
180mohm
Rds(on) Test Voltage Vgs
10V
Leaded Process Compatible
Yes
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF640LPBF

Available stocks

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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF640LPBF
Quantity:
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Company:
Part Number:
IRF640LPBF
Quantity:
2 970
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91037.
Document Number: 91037
S-81241-Rev. A, 07-Jul-08
Re-applied
voltage
Reverse
recovery
current
+
-
R
G
D.U.T.
*
Driver gate drive
D.U.T. I
D.U.T. V
Inductor current
V
GS
= 5 V for logic level devices
P.W.
SD
DS
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Ripple ≤ 5 %
Body diode forward drop
Period
Body diode forward
+
-
IRF640S, IRF640L, SiHF640S, SiHF640L
Fig. 14 - For N-Channel
• dV/dt controlled by R
• Driver same type as D.U.T.
• I
• D.U.T. - device under test
SD
Diode recovery
current
controlled by duty factor "D"
Circuit layout considerations
dV/dt
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
dI/dt
D =
-
G
Period
P.W.
+
V
V
I
SD
GS
DD
= 10 V*
+
-
V
DD
Vishay Siliconix
www.vishay.com
7

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