IRF640LPBF Vishay, IRF640LPBF Datasheet - Page 6

• Manufacturer Part Number: IRF640LPBF
• Description: MOSFET N-CH 200V 18A TO-262
• Manufacturer: Vishay

Specifications of IRF640LPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 180 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 130W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 18A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 180mohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF640LPBF

IRF640S, IRF640L, SiHF640S, SiHF640L
Vishay Siliconix
www.vishay.com
6
10 V
Fig. 13a - Basic Gate Charge Waveform
V
G
Q
GS
Charge
Q
Q
GD
G
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
12 V
V
Fig. 13b - Gate Charge Test Circuit
GS
Same type as D.U.T.
Current regulator
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
I
G
Document Number: 91037
S-81241-Rev. A, 07-Jul-08
D.U.T.
I
D
+
-
V
DS