IRF9Z30PBF Vishay, IRF9Z30PBF Datasheet - Page 2

• Manufacturer Part Number: IRF9Z30PBF
• Description: MOSFET P-CH 50V 18A TO-220AB
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of IRF9Z30PBF

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 140 mOhm @ 9.3A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Input Capacitance (ciss) @ Vds: 900pF @ 25V
• Power - Max: 74W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.14 Ohm @ 10 V
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 74000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: -18A
• Drain Source Voltage Vds: -50V
• On Resistance Rds(on): 93mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Fall Time: 64 ns
• Rise Time: 110 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF9Z30PBF

IRF9Z30PbF
Note:
Electrical Characteristics @ T
BV
V
I
I
I
R
g
C
C
C
t
t
t
t
Q
Q
Q
L
L
Source-Drain Diode Ratings and Characteristics
I
I
V
t
Q
T
GSS
DSS
D(on)
d(on)
r
d(off)
f
S
SM
rr
fs
D
S
GS(th)
DS(on)
iss
oss
rss
SD
on
g
gs
gd
rr
DSS
2
T
Repetitive Rating :Pulse width limited by max. junction tempeature. See Transient Thermal Impedance Curve (Fig.5).
@ V
Pulse Test : Pulse width
J
= 25°C to 150°C
dd
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Drain-to-Source Leakage Current
On- State Drain Current
Static Drain-to-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge (Gate -Source Plus Gate-Drain)
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Internal Drain Inductance
Internal Source Inductance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-on Time
= -25V, T
Parameter
J
= 25°C, L = 100µH, R
Parameter
≤
300ms, Duty Cycle
J
= 25°C (unless otherwise specified)
G
= 25Ω.
≤
2%.
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
Min. Typ. Max. Units
Min. Typ. Max. Units
0.20 0.47
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-2.0
3.1
54
-50
-18
0.093 0.14
–––
–––
–––
120
–––
–––
–––
–––
–––
–––
–––
900
570
140
110
4.7
6.9
9.7
4.5
7.5
12
21
64
26
-1000
250
-500
-250
–––
500
–––
–––
–––
–––
–––
170
–––
–––
-6.3
1.1
-4.0
-18
-60
18
32
96
39
10
15
µC
nC
nH
nA
µA
pF
ns
ns
Ω
A
V
V
A
S
V
Measured from the drain
Measured from the source
V
V
V
V
V
V
V
V
V
V
V
ƒ = 1.0MHz,
V
See Fig.16
(MOSFET switching times are assentially independent
of operating temperature)
VGS = -10V, ID = -18A, V
See Fig.17 for test circuit (Gate charge is essentially
independent of operating temperature.)
MOSFET symbol
showing the
integral reverse
p-n junction rectifier.
T
T
di/dt = 100A/µs
lead, 6mm (0.25 in.) from
package to center of die.
lead, 6mm (0.25 in.) from
package to source bonding pad.
GS
DS
GS
GS
DS
DS
DS
GS
DS
GS
DS
DD
J
J
= 25°C, I
= 25°C, I
> I
= 0V, I
= V
= -20V
= 20V
= Max. Rating, V
= Max. Rating x 0.8, V
= -10V, I
= 2 X V
= 0V
= -25V
= -25V, ID = -18A, RG = 13Ω, RD = 1.3Ω
D(on)
GS
, I
D
X R
D
GS
= -250µA
D
S
F
= -250µA
, I
DS(ON)
= -9.3A
= -18A, V
= -18A
DS
= -9.0A
See Fig.10
(max)., V
GS
Conditions
Conditions
= 0V
GS
GS
DS
= 0V, T
= 0V
= 0.8 Max. Rating
GS
Modified MOSFET symbol
showing
the internal
device
inductances.
= -10V
www.irf.com
J
= 125°C
S
+ L
D
.