IRF630PBF Vishay, IRF630PBF Datasheet - Page 6
![MOSFET N-CH 200V 9A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF630PBF
Manufacturer Part Number
IRF630PBF
Description
MOSFET N-CH 200V 9A TO-220AB
Manufacturer
Vishay
Type
Power MOSFETr
Specifications of IRF630PBF
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 5.4A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
800pF @ 25V
Power - Max
74W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.4 Ohm @ 10 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9 A
Power Dissipation
74000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
9A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
400mohm
Rds(on) Test Voltage Vgs
10V
No. Of Pins
3
Leaded Process Compatible
Yes
Fall Time
20 ns
Rise Time
28 ns
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.4Ohm
Drain-source On-volt
200V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF630PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF630PBF
Manufacturer:
IR
Quantity:
20 000
IRF630, SiHF630
Vishay Siliconix
www.vishay.com
6
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
10 V
Fig. 13a - Basic Gate Charge Waveform
V
G
Q
GS
Charge
Q
Q
GD
G
91031_12c
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
500
400
300
200
100
600
This datasheet is subject to change without notice.
0
25
V
DD
Starting T
= 50 V
50
J
, Junction Temperature (°C)
75
100
Top
Bottom
125
12 V
Fig. 13b - Gate Charge Test Circuit
V
4.0 A
5.7 A
9.0 A
GS
Same type as D.U.T.
I
D
Current regulator
150
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
I
G
S11-0509-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91031
D.U.T.
I
D
+
-
V
DS