IRF630PBF Vishay, IRF630PBF Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IRF630PBF
Manufacturer Part Number
IRF630PBF
Description
MOSFET N-CH 200V 9A TO-220AB
Specifications of IRF630PBF
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 5.4A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
800pF @ 25V
Power - Max
74W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.4 Ohm @ 10 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9 A
Power Dissipation
74000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
9A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
400mohm
Rds(on) Test Voltage Vgs
10V
No. Of Pins
3
Leaded Process Compatible
Yes
Fall Time
20 ns
Rise Time
28 ns
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.4Ohm
Drain-source On-volt
200V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
IRF630PbF
Document Number: 91031
www.vishay.com
1
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IRF630PBF Summary of contents
... Document Number: 91031 IRF630PbF www.vishay.com 1 ...
... Document Number: 91031 www.vishay.com 2 ...
... Document Number: 91031 www.vishay.com 3 ...
... Document Number: 91031 www.vishay.com 4 ...
... Document Number: 91031 www.vishay.com 5 ...
... Document Number: 91031 www.vishay.com 6 ...
... Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Body Diode Inductor Curent Ripple ≤ Document Number: 91031 + • • • • G • SD • P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Forward Drop + - V =10V www.vishay.com 7 ...
... LEAD ASSIGNMENTS LEAD ASSIGNMENTS HEXFET IGBTs, CoPACK 1 - GATE 2 - DRAIN 1- GATE 1- GATE 2- DRAIN 2- COLLECTOR 3 - SOURCE 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 0.55 (.022) 3X 0.46 (.018) 2.92 (.115) 2.64 (.104) PAR DAT E CODE 1997 INE C TAC Fax: (310) 252-7903 www.vishay.com 09/04 8 ...
... Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. ...
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