IPW60R075CP Infineon Technologies, IPW60R075CP Datasheet

MOSFET N-CH 650V 39A TO-247

IPW60R075CP

Manufacturer Part Number
IPW60R075CP
Description
MOSFET N-CH 650V 39A TO-247
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheets

Specifications of IPW60R075CP

Package / Case
TO-247-3 (Straight Leads)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
75 mOhm @ 26A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
39A
Vgs(th) (max) @ Id
3.5V @ 1.7mA
Gate Charge (qg) @ Vgs
116nC @ 10V
Input Capacitance (ciss) @ Vds
4000pF @ 100V
Power - Max
313W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.075 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
39 A
Power Dissipation
313000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
39A
Drain Source Voltage Vds
650V
On Resistance Rds(on)
75mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IPW60R075CPIN
IPW60R075CPXK
SP000358192

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPW60R075CP
Manufacturer:
Infineon
Quantity:
290
Part Number:
IPW60R075CP
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
IPW60R075CP 6R075P
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
IPW60R075CPA
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 2.2
Features
• Lowest figure-of-merit R
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
CoolMOS CP is designed for:
• Hard switching SMPS topologies for Server and Telecom
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive t
Avalanche current, repetitive t
MOSFET dv /dt ruggedness
Gate source voltage
Power dissipation
Operating and storage temperature
Mounting torque
CoolMOS
Type
IPW60R075CP
TM
Power Transistor
2)
Package
PG-TO247-3
j
=25 °C, unless otherwise specified
ON
x Q
AR
AR
1)
g
2),3)
2),3)
for target applications
Symbol Conditions
I
I
E
E
I
dv /dt
V
P
T
D
D,pulse
AR
Marking
6R075P
j
AS
AR
GS
tot
, T
stg
T
T
T
I
I
V
static
AC (f >1 Hz)
T
M3 and M3.5 screws
D
D
page 1
C
C
C
C
DS
=11 A, V
=11 A, V
=25 °C
=100 °C
=25 °C
=25 °C
=0...480 V
DD
DD
=50 V
=50 V
Product Summary
V
R
Q
DS
DS(on),max
g,typ
@ T
j,max
-55 ... 150
Value
1150
130
±20
±30
313
1.7
39
25
11
50
60
PG-TO247-3
IPW60R075CP
0.075
650
87
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
V
nC
2008-03-13

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IPW60R075CP Summary of contents

Page 1

... Symbol Conditions I T =25 ° =100 ° =25 °C D,pulse = = 2 2), =0...480 static >1 Hz =25 °C tot stg M3 and M3.5 screws page 1 IPW60R075CP @ T 650 DS j,max 0.075 DS(on),max 87 g,typ PG-TO247-3 Value 39 25 130 1150 1 ±20 ±30 313 -55 ... 150 Unit V/ °C Ncm 2008-03-13 ...

Page 2

... GS(th =600 DSS T =25 ° =600 =150 ° = GSS = = DS(on) T =25 ° = = =150 ° MHz, open drain G page 2 IPW60R075CP Value Unit 26 A 117 15 V/ns Values Unit min. typ. max 0.4 K 260 °C 600 - - V 2 µ 100 nA - 0.068 0.075 - 0. 1.3 - 2008-03-13 ...

Page 3

... =400 plateau = =25 ° =400 /dt =100 A/µ rrm < <T , identical low side and high side switch peak (BR)DSS j jmax while V oss while V oss page 3 IPW60R075CP Values Unit min. typ. max. - 4000 - pF - 190 - - 180 - - 480 - - 110 - - 116 - 5 0.9 1 500 - µ ...

Page 4

... D 0 0.2 0.1 0.05 0.02 0. single pulse - Rev. 2.2 2 Safe operating area I =f parameter 120 160 [° Typ. output characteristics I =f parameter: V 180 150 120 [s] p page 4 IPW60R075CP ); T =25 ° limited by on-state resistance 10 µs 100 µ [ =25 ° µ 2008-03-13 ...

Page 5

... Rev. 2.2 6 Typ. drain-source on-state resistance R =f(I DS(on) parameter 5 0.2 4 Typ. transfer characteristics I =f parameter: T 200 160 120 typ 100 140 180 0 [°C] j page 5 IPW60R075CP ); T =150 ° 6 5 [A] D |>2 DS(on)max j C °25 C °150 [ 100 10 2008-03-13 ...

Page 6

... Forward characteristics of reverse diode I =f parameter 120 V 400 100 [nC] 12 Drain-source breakdown voltage V =f(T BR(DSS) 700 660 620 580 540 100 140 180 -60 [°C] j page 6 IPW60R075CP j 25 °C, 98% 150 °C, 98% 25 °C 150 °C 0.5 1 1 =0. - 100 140 T [° 180 2008-03-13 ...

Page 7

... Typ. capacitances C =f MHz Ciss 3 10 Coss Crss 100 200 V Rev. 2.2 14 Typ. Coss stored energy E = f(V oss 300 400 500 0 [V] DS page 7 IPW60R075CP ) 100 200 300 400 500 V [V] DS 600 2008-03-13 ...

Page 8

... Definition of diode switching characteristics Rev. 2.2 page 8 IPW60R075CP 2008-03-13 ...

Page 9

... PG-TO247-3-21-41: Outlines Rev. 2.2 page 9 IPW60R075CP 2008-03-13 ...

Page 10

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2 page 10 IPW60R075CP 2008-03-13 ...

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