SPW24N60C3 Infineon Technologies, SPW24N60C3 Datasheet - Page 7

• Manufacturer Part Number: SPW24N60C3
• Description: MOSFET N-CH 650V 24.3A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPW24N60C3

• Package / Case: TO-247-3 (Straight Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 15.4A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 24.3A
• Vgs(th) (max) @ Id: 3.9V @ 1.2mA
• Gate Charge (qg) @ Vgs: 135nC @ 10V
• Input Capacitance (ciss) @ Vds: 3000pF @ 25V
• Power - Max: 240W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohm @ 10 V
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 24.3 A
• Power Dissipation: 240000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000014695; SPW24N60C3; SPW24N60C3IN; SPW24N60C3X; SPW24N60C3XK

Please note the new package dimensions arccording to PCN 2009-134-A
9 Typ. gate charge
V
parameter: I
11 Avalanche SOA
I
par.: T
Rev. 2.5
AR
GS
= f (t
A
= f (Q
V
16
12
10
28
20
16
12
8
6
4
2
0
8
4
0
10
j
0
≤ 150 °C
SPW24N60C3
0.2 V
0.8 V
AR
-3
Tj (START) =125°C
20
Gate
)
10
DS max
DS max
D
-2
= 24.3 A pulsed
40
)
10
-1
60
10
80
0
Tj (START) =25°C
10
100
1
120 140 nC 170
10
2
Q
t
µs
AR
Gate
10
Page 7
4
10 Forward characteristics of body diode
I
parameter: T j , t
12 Avalanche energy
E
par.: I
F
AS
= f (V
mJ
10
10
10
10
= f ( T
0.9
0.7
0.6
0.5
0.4
0.3
0.2
0.1
A
D
-1
0
2
1
0
25
0
SPW24N60C3
= 10 A, V
SD
j
)
)
0.4
50
0.8
p
DD
= 10 µs
1.2
75
= 50 V
T
T
T
T
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
1.6
SPW24N60C3
100
2
2008-02-11
2.4
°C
V
V
T
SD
j
150
3