STD6N62K3 STMicroelectronics, STD6N62K3 Datasheet - Page 3

• Manufacturer Part Number: STD6N62K3
• Description: MOSFET N-CH 620V 5.5A DPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STD6N62K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.28 Ohm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 620V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 25.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 706pF @ 50V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.28 Ohm @ 10 V
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5.5 A
• Power Dissipation: 90000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8480-2

STD6N62K3 - STF6N62K3 - STP6N62K3 - STU6N62K3
1
Electrical ratings
Table 2.
1. Limited by package
2. Pulse width limited by safe operating area
3. I
Table 3.
Table 4.
V
Symbol
Symbol
R
Symbol
dv/dt
R
R
ESD(G-S)
I
DM
P
V
thj-case
thj-amb
V
V
T
thj-pcb
E
SD
I
I
I
TOT
T
T
AR
ISO
GS
DS
stg
AS
D
D
j
l
(2)
(3)
≤ 5.5 A, di/dt ≤ 200 A/µs, V
Drain-source voltage (V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Gate source ESD(HBM-C = 100 pF,
R = 1.5 kΩ)
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; T
Storage temperature
Max. operating junction temperature
Thermal resistance junction-case max
Thermal resistance junction-pcb max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
Single pulse avalanche energy
(starting T
Absolute maximum ratings
Thermal data
Avalanche characteristics
C
j
= 25 °C)
= 25°C, I
Parameter
Parameter
Parameter
D
C
= I
= 25 °C
DD
GS
j
AR
max)
= 80% V
= 0)
, V
DD
C
C
= 25 °C
= 100 °C
(BR)DSS
= 50V)
TO-220 DPAK IPAK TO-220FP
TO-220 DPAK IPAK TO-220FP
62.5
--
3.465
0.72
1.39
5.5
22
90
--
50
Max value
-55 to 150
100
Value
2500
± 30
140
620
150
300
5.5
9
--
Electrical ratings
3.465
5.5
22
62.5
2500
0.2
25
--
5
(1)
(1)
(1)
°C/W
°C/W
°C/W
W/°C
Unit
Unit
Unit
V/ns
mJ
°C
°C
°C
W
A
V
V
A
A
A
V
V
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