IPB04N03LA Infineon Technologies, IPB04N03LA Datasheet - Page 5

• Manufacturer Part Number: IPB04N03LA
• Description: MOSFET N-CH 25V 80A D2PAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB04N03LA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.9 mOhm @ 55A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 60µA
• Gate Charge (qg) @ Vgs: 32nC @ 5V
• Input Capacitance (ciss) @ Vds: 3877pF @ 15V
• Power - Max: 107W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IPB04N03LAINTR

Rev. 1.7
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
140
120
100
160
140
120
100
80
60
40
20
80
60
40
20
DS
GS
0
0
); T
0
0
); |V
j
=25 °C
j
GS
DS
10 V
|>2|I
1
4.5 V
D
|R
1
DS(on)max
175 °C
2
V
V
GS
DS
[V]
[V]
3
25 °C
2
4
2.8 V
3.5 V
3.8 V
3.2 V
4.1 V
3 V
page 5
3
5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
120
100
20
15
10
80
60
40
20
D
=f(I
5
0
0
); T
0
0
D
3 V
j
); T
=25 °C
GS
3.2 V
20
j
=25 °C
20
3.5 V
40
60
3.8 V
I
I
D
D
40
[A]
[A]
80
4.1 V
IPB04N03LA G
100
60
120
4.5 V
10 V
2006-05-10
140
80