STB60NF06T4 STMicroelectronics, STB60NF06T4 Datasheet - Page 5

MOSFET N-CH 60V 60A D2PAK

STB60NF06T4

Manufacturer Part Number
STB60NF06T4
Description
MOSFET N-CH 60V 60A D2PAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STB60NF06T4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
16 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
66nC @ 10V
Input Capacitance (ciss) @ Vds
1810pF @ 25V
Power - Max
110W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.015 Ohms
Forward Transconductance Gfs (max / Min)
20 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
60 A
Power Dissipation
110 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
20 ns
Minimum Operating Temperature
- 65 C
Rise Time
108 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7950-2
STB60NF06T4

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
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Manufacturer:
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30 000
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STB60NF06 - STB60NF06-1
Table 6.
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Symbol
I
V
SDM
I
SD
RRM
I
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
V
(see
SD
SD
DD
= 60A, V
= 60A, di/dt = 100A/µs,
= 25V, T
Figure
Test conditions
14)
GS
j
= 150°C
= 0
Min.
Electrical characteristics
Typ.
182
73
5
Max.
240
1.3
60
Unit
nC
ns
A
A
V
A
5/14

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