IPD70N10S3-12 Infineon Technologies, IPD70N10S3-12 Datasheet
![no-image](/images/manufacturer_photos/0/3/327/infineon_technologies_sml.jpg)
IPD70N10S3-12
Specifications of IPD70N10S3-12
IPD70N10S3-12TR
SP000427248
Available stocks
Related parts for IPD70N10S3-12
IPD70N10S3-12 Summary of contents
Page 1
... IEC climatic category; DIN IEC 68-1 Rev. 1.0 Product Summary Marking QN1012 Symbol Conditions I T =25° =100° =25°C D,pulse =35A =25 °C tot stg page 1 IPD70N10S3-12 DS DS(on),max D PG-TO252-3-11 Value =10V =10V 280 410 70 ±20 125 -55 ... +175 55/175/56 100 V 11 Unit °C 2008-04-22 ...
Page 2
... V V =0V 1mA (BR)DSS =83µA GS(th =80V, V =0V DSS T =25° =80V, V =0V =125° =20V, V =0V GSS =10V, I =70A DS(on page 2 IPD70N10S3-12 Values min. typ. max 1 100 - - 2.0 3.0 4.0 - 0.01 0 100 - - 100 - 9.2 11.1 2008-04-22 Unit K/W V µ ...
Page 3
... R =3 d(off =80V, I =70A 10V plateau =25° S,pulse V =0V, I =70A =25° =50V /dt =100A/µ (one layer, 70 µm thick) copper area for drain page 3 IPD70N10S3-12 Values min. typ. max. - 3350 4355 - 940 1222 - 105 - =10V 5 0 100 - 265 Unit pF 158 - 280 1 ...
Page 4
... parameter 1000 100 Rev. 1.0 2 Drain current 150 200 0 4 Max. transient thermal impedance Z = f(t thJC parameter µ µs 100 µ 100 [V] page 4 IPD70N10S3- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2008-04-22 ...
Page 5
... Typ. transfer characteristics parameter 250 200 150 100 Rev. 1.0 6 Typ. drain-source on-state resistance R = f(I DS(on) parameter 6 5. [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 25 -55 ° °C 15 175 ° -60 [V] page 5 IPD70N10S3- ° 100 T [° 6 100 120 140 180 2008-04-22 ...
Page 6
... Rev. 1.0 10 Typ. capacitances 400 µ 100 140 180 12 Typ. avalanche characteristics parameter: T 100 10 25 °C 1 0.8 0 1.2 1.2 1.4 1.4 0.1 [V] [V] page 6 IPD70N10S3- MHz [ j(start) 100 °C 150 ° 100 t [µs] AV Ciss Coss Crss °C 1000 2008-04-22 ...
Page 7
... A 200 100 [° Typ. gate charge pulsed GS gate D parameter gate Rev. 1.0 14 Typ. drain-source breakdown voltage V BR(DSS) 115 110 105 100 95 90 125 175 16 Gate charge waveforms s(th (th [nC] page 7 IPD70N10S3- -55 - 105 T [° 145 Q gate 2008-04-22 ...
Page 8
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 IPD70N10S3-12 2008-04-22 ...
Page 9
... Revision History Version Rev. 1.0 Date page 9 IPD70N10S3-12 Changes 2008-04-22 ...