STD38NH02LT4 STMicroelectronics, STD38NH02LT4 Datasheet - Page 3

• Manufacturer Part Number: STD38NH02LT4
• Description: MOSFET N-CH 24V 38A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD38NH02LT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.5 mOhm @ 19A, 10V
• Drain To Source Voltage (vdss): 24V
• Current - Continuous Drain (id) @ 25° C: 38A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 1070pF @ 25V
• Power - Max: 40W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-3160-2

STD38NH02L - STD38NH02L-1
1
Electrical ratings
Table 1.
1. Garanted when external R
2. Pulse width limited by safe operating area.
3. Starting T
Table 2.
Rthj-case
Rthj-amb
V
Symbol
E
I
spike
V
DM
V
V
T
T
P
AS
DGR
I
I
T
DS
GS
stg
J
D
D
tot
j
(2)
(3)
(1)
j
= 25 °C, I
Absolute maximum ratings
Thermal data
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
Drain-source voltage rating
Drain-source voltage (V
Drain-gate voltage (R
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating Factor
Single pulse avalanche energy
Storage temperature
Max. operating junction temperature
D
= 19A, V
g
=4.7 Ω and t
DD
Parameter
= 18V
C
GS
f
= 25°C
< t
GS
= 20 kΩ)
fmax
= 0)
.
C
C
= 25°C
= 100°C
-55 to 175
Value
± 20
0.27
152
250
30
24
24
38
27
40
Electrical ratings
3.75
275
100
W/°C
Unit
mJ
°C
W
V
V
A
A
V
V
A
°C/W
°C/W
°C
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