STS4DPFS30L STMicroelectronics, STS4DPFS30L Datasheet - Page 3

• Manufacturer Part Number: STS4DPFS30L
• Description: MOSFET P-CH 30V 5A 8-SOIC
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STS4DPFS30L

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 55 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 5V
• Input Capacitance (ciss) @ Vds: 1350pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.045 Ohms
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 4 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-4397-2

ELECTRICAL CHARACTERISTICS(CONTINUED)
Table 7: Dynamic
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 8: Switching On
Table 9: Switching Off
Table 10: Source-Drain Diode
Table 11: Schottcky Static Electrical Characteristics
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
Symbol
Symbol
Symbol
Symbol
I
V
SDM
g
t
t
I
Symbol
C
SD
C
C
Q
d(on)
Q
d(off)
RRM
fs
I
Q
Q
SD
t
t
V
oss
t
rss
I
iss
rr
gd
r
gs
f
(1)
rr
R
g
F
(1)
(2)
(*)
(*)
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-off Delay Time
Fall Time
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reversed Leakage Current
Forward Voltage Drop
Parameter
Parameter
Parameter
Parameter
Parameter
V
R
(see, Figure 16)
I
I
V
(see, Figure 17)
SD
SD
V
V
V
R
(see Figure 16))
V
V
(see, Figure 19)
DD
DD
G
DS
DS
DD
DD
GS
G
= 4.7
T
T
T
T
= 4.7
= 5 A, V
= 5 A, di/dt = 100 A/µs
= 15 V, I
= 15V, T
J
J
J
J
= 15 V
= 25V, f = 1 MHz, V
= 15 V, I
= 24 V, I
= 5 V
= 25 °C , V
= 125 °C , V
= 25 °C , I
= 125 °C , I
Test Conditions
Test Conditions
Test Conditions
Test Conditions
Test Conditions
V
GS
,
V
I
D
GS
j
D
D
D
GS
= 150°C
= 2.5 A,
= 2.5 A
= 0
= 2.5 A,
= 5 A,
= 4.5 V
F
= 4.5 V
R
F
= 3 A
R
= 30 V
= 3 A
= 30 V
GS
= 0
Min.
Min.
Min.
Min.
Min.
Typ.
Typ.
Typ.
0.03
0.46
1350
125
Typ.
1.6
490
130
Typ.
12.5
35
45
36
10
25
35
5
3
STS4DPFS30L
Max.
0.51
0.46
100
Max.
Max.
0.2
Max.
Max.
1.2
20
5
16
Unit
Unit
Unit
mA
mA
nC
Unit
Unit
ns
ns
ns
A
A
V
A
V
V
nC
nC
nC
pF
pF
pF
ns
ns
3/9
S