ATP102-TL-H SANYO, ATP102-TL-H Datasheet - Page 2

• Manufacturer Part Number: ATP102-TL-H
• Description: MOSFET P-CH 30V 40A ATPAK
• Manufacturer: SANYO

Specifications of ATP102-TL-H

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18.5 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 40A
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 1490pF @ 10V
• Power - Max: 40W
• Mounting Type: Surface Mount
• Package / Case: ATPAK (2 leads+tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Other names: 869-1073-2

Continued from preceding page.
Package Dimensions
unit : mm (typ)
7057-001
Switching Time Test Circuit
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
--10V
P.G
0V
PW=10μs
D.C.≤1%
V IN
0.8
1
2.3
Parameter
6.5
4
V IN
2
2.3
50Ω
G
3
0.6
V DD = --15V
D
S
I D = --20A
R L =0.75Ω
0.55
ATP102
0.4
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
1.5
Symbol
V OUT
0.4
V DS =--10V, I D =--1mA
V DS =--10V, I D =--20A
I D =--20A, V GS =--10V
I D =--10A, V GS =--4.5V
V DS =--10V, f=1MHz
V DS =--10V, f=1MHz
V DS =--10V, f=1MHz
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
V DS =--15V, V GS =--10V, I D =--40A
V DS =--15V, V GS =--10V, I D =--40A
V DS =--15V, V GS =--10V, I D =--40A
I S =--40A, V GS =0V
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPAK
ATP102
4.6
2.6
Conditions
0.4
min
--1.2
Ratings
typ
--0.99
1490
11.5
360
270
135
135
185
4.2
29
14
22
11
34
max
--2.6
18.5
--1.5
31
No. A1479-2/4
Unit
mΩ
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
S
V
V