IPP80N04S3-06 Infineon Technologies, IPP80N04S3-06 Datasheet - Page 9

• Manufacturer Part Number: IPP80N04S3-06
• Description: MOSFET N-CH 40V 80A TO220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP80N04S3-06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.7 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 52µA
• Gate Charge (qg) @ Vgs: 47nC @ 10V
• Input Capacitance (ciss) @ Vds: 3250pF @ 25V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0057 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 100 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000261233

Rev. 1.1
Revision History
Version
1.1
1.1
1.1
1.1
1.1
Date
page 9
30.04.2007
30.04.2007
30.04.2007
30.04.2007
30.04.2007 QGD max from 13nC to 16nC
IPI80N04S3-06, IPP80N04S3-06
Changes
RthJC from 1.7K/W to 1.5K/W
RDSon max IPB from 5.8mOhm to
5.4mOhm
RDSon max IPP/I from 6.1mOhm
to 5.7mOhm
Update of diagrams involving
RthJC and RDSon_max
IPB80N04S3-06
2007-05-03