SPB12N50C3 Infineon Technologies, SPB12N50C3 Datasheet - Page 5
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SPB12N50C3
Manufacturer Part Number
SPB12N50C3
Description
MOSFET N-CH 560V 11.6A TO-263
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.SPB12N50C3.pdf
(12 pages)
Specifications of SPB12N50C3
Package / Case
D²Pak, TO-263 (2 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
560V
Current - Continuous Drain (id) @ 25° C
11.6A
Vgs(th) (max) @ Id
3.9V @ 500µA
Gate Charge (qg) @ Vgs
49nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
125W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.38 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11.6 A
Power Dissipation
125000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000014894
SPB12N50C3
SPB12N50C3INTR
SPB12N50C3XT
SPB12N50C3
SPB12N50C3INTR
SPB12N50C3XT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SPB12N50C3
Manufacturer:
INFINEON
Quantity:
30 000
1 Power dissipation
P
3 Safe operating area
I
parameter : D = 0 , T
Rev. 2.4
D
tot
= f ( V
10
10
= f ( T
10
10
10
140
120
110
100
W
A
90
80
70
60
50
40
30
20
10
-1
-2
0
2
1
0
10
0
SPP12N50C3
0
DS
C
20
)
)
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
40
10
60
1
C
=25°C
80
100
10
120
2
°C
V
T
V
C
DS
160
10
Page 5
3
2 Power dissipation FullPAK
P
4 Safe operating area FullPAK
I
parameter: D = 0, T
D
tot
= f ( V
10
10
= f ( T
10
10
10
W
A
36
28
24
20
16
12
-1
-2
8
4
0
2
1
0
10
0
DS
0
C
20
)
)
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
40
10
60
C
1
= 25°C
80
100
SPB12N50C3
10
2005-11-07
120
2
°C
V
T
V
C
DS
160
10
3