BSP373 L6327 Infineon Technologies, BSP373 L6327 Datasheet - Page 8
![MOSFET N-CH 100V 1.7A SOT-223](/photos/5/51/55179/448-sot-223_sml.jpg)
BSP373 L6327
Manufacturer Part Number
BSP373 L6327
Description
MOSFET N-CH 100V 1.7A SOT-223
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSP373_L6327.pdf
(8 pages)
Specifications of BSP373 L6327
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
300 mOhm @ 1.7A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
1.7A
Vgs(th) (max) @ Id
4V @ 1mA
Input Capacitance (ciss) @ Vds
550pF @ 25V
Power - Max
1.8W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.3 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.7 A @ Ta=28C
Power Dissipation
1800 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BSP373 L6327
BSP373L6327INTR
BSP373L6327XT
SP000087065
BSP373L6327INTR
BSP373L6327XT
SP000087065
Avalanche energy E
parameter: I
R
Safe operating area I
parameter : D = 0.01, T
Rev 1.2
E
GS
AS
= 25 Ω , L = 23.3 mH
mJ
50
40
35
30
25
20
15
10
5
0
20
D
40
= 1.7 A, V
60
D
=f( V
C
=25˚C
AS
80
DS
DD
= ƒ ( T
)
= 25 V
100
j
)
120
˚C
T
j
160
8
Drain-source breakdown voltage
V
V
(BR)DSS
(BR)DSS
120
116
114
112
110
108
106
104
102
100
98
96
94
92
90
V
-60
= ƒ ( T
-20
j
)
20
60
100
BSP 373
2007-02-08
T
˚C
j
160