BSP373 L6327 Infineon Technologies, BSP373 L6327 Datasheet - Page 8

• Manufacturer Part Number: BSP373 L6327
• Description: MOSFET N-CH 100V 1.7A SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP373 L6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 1.7A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 550pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.7 A @ Ta=28C
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BSP373 L6327; BSP373L6327INTR; BSP373L6327XT; SP000087065

Avalanche energy E
parameter: I
R
Safe operating area I
parameter : D = 0.01, T
Rev 1.2
E
GS
AS
= 25 Ω , L = 23.3 mH
mJ
50
40
35
30
25
20
15
10
5
0
20
D
40
= 1.7 A, V
60
D
=f( V
C
=25˚C
AS
80
DS
DD
= ƒ ( T
)
= 25 V
100
j
)
120
˚C
T
j
160
8
Drain-source breakdown voltage
V
V
(BR)DSS
(BR)DSS
120
116
114
112
110
108
106
104
102
100
98
96
94
92
90
V
-60
= ƒ ( T
-20
j
)
20
60
100
BSP 373
2007-02-08
T
˚C
j
160