NTF2955T1G ON Semiconductor, NTF2955T1G Datasheet - Page 5

MOSFET P-CH 60V 1.7A SOT-223

NTF2955T1G

Manufacturer Part Number
NTF2955T1G
Description
MOSFET P-CH 60V 1.7A SOT-223
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTF2955T1G

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
170 mOhm @ 750mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
1.7A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
14.3nC @ 10V
Input Capacitance (ciss) @ Vds
492pF @ 25V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.185 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
1.77 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.6 A
Power Dissipation
2300 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTF2955T1GOSTR

Available stocks

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Manufacturer
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Price
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Manufacturer:
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Quantity:
30 000
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Quantity:
20 000
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0
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Quantity:
4 500
Company:
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6 000
Company:
Part Number:
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Quantity:
28
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
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Email: orderlit@onsemi.com
ON Semiconductor and
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
0.08 (0003)
e1
H
E
A1
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
1
e
b1
D
4
2
*For additional information on our Pb−Free strategy and soldering
3
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
b
0.079
E
A
2.0
0.079
2.0
N. American Technical Support: 800−282−9855 Toll Free
Europe, Middle East and Africa Technical Support:
Japan Customer Focus Center
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
USA/Canada
Phone: 421 33 790 2910
Phone: 81−3−5773−3850
q
0.059
1.5
SOT−223 (TO−261)
http://onsemi.com
CASE 318E−04
0.091
2.3
ISSUE M
0.15
3.8
5
L1
0.091
C
2.3
SCALE 6:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
0.248
Y14.5M, 1982.
STYLE 3:
6.3
inches
DIM
H
A1
b1
e1
L1
mm
A
D
PIN 1. GATE
b
c
E
e
q
E
2. DRAIN
3. SOURCE
4. DRAIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
1.50
6.70
MIN
MILLIMETERS
NOM
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
1.63
0.06
0.75
3.06
0.29
6.50
3.50
2.30
0.94
1.75
7.00
MAX
1.75
0.10
0.89
3.20
0.35
6.70
3.70
2.40
1.05
2.00
7.30
10°
0.060
0.001
0.024
0.009
0.249
0.130
0.087
0.033
0.060
0.264
0.115
MIN
INCHES
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
0.069
0.276
NOM
NTF2955/D
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
0.078
0.287
MAX
10°

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