NTF2955T1G ON Semiconductor, NTF2955T1G Datasheet - Page 3

• Manufacturer Part Number: NTF2955T1G
• Description: MOSFET P-CH 60V 1.7A SOT-223
• Manufacturer: ON Semiconductor

Specifications of NTF2955T1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 170 mOhm @ 750mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 14.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 492pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.185 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 1.77 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.6 A
• Power Dissipation: 2300 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTF2955T1GOSTR

10
0.4
0.3
0.2
0.1
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
8
6
4
2
0
−50
0
2
1
0
0
0
V
Figure 3. On−Resistance versus Drain Current
I
V
GS
−V
D
GS
1
= −1.5 A
−25
Figure 5. On−Resistance Variation with
DS,
Figure 1. On−Region Characteristics
= −10 V
= −10 V
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
2
T
2
J
, JUNCTION TEMPERATURE (°C)
−I
0
D,
3
TYPICAL PERFORMANCE CURVES
DRAIN CURRENT (AMPS)
V
and Temperature
GS
25
Temperature
4
4
= −10 V to −7 V
T
T
T
J
J
J
5
50
= 125°C
= 25°C
= −55°C
6
6
75
7
100
V
V
V
V
V
GS
GS
GS
GS
GS
T
8
J
8
= −5.5 V
= −4.5 V
= −3.8 V
= 25 °C
= −6 V
= −5 V
125
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9
10
150
10
3
0.225
0.175
0.125
0.075
1000
0.25
0.15
0.05
(T
100
0.1
0.2
10
10
J
0
8
6
4
2
0
5
= 25°C unless otherwise noted)
2
Figure 4. On−Resistance versus Drain Current
V
V
Figure 6. Drain−to−Source Leakage Current
T
DS
GS
10
−V
J
−V
= 25°C
≥ 10 V
= 0 V
DS,
GS,
Figure 2. Transfer Characteristics
15
T
J
2
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
GATE−TO−SOURCE VOLTAGE (VOLTS)
= 25°C
−I
4
T
20
D,
J
= −55°C
DRAIN CURRENT (AMPS)
and Gate Voltage
versus Voltage
25
V
V
4
T
T
J
GS
GS
J
= 150°C
30
= 125°C
= −10 V
= −15 V
6
35
T
J
6
= 125°C
40
45
8
8
50
55
10
10
60