IRF7207TRPBF International Rectifier, IRF7207TRPBF Datasheet

IRF7207TRPBF

Manufacturer Part Number

IRF7207TRPBF

Description

MOSFET P-CH 20V 5.4A 8-SOIC

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF7207TRPBF.pdf (7 pages)

Specifications of IRF7207TRPBF

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

60 mOhm @ 5.4A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

5.4A

Vgs(th) (max) @ Id

700mV @ 250µA

Gate Charge (qg) @ Vgs

22nC @ 4.5V

Input Capacitance (ciss) @ Vds

780pF @ 15V

Power - Max

2.5W

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

60 mOhms

Drain-source Breakdown Voltage

- 20 V

Gate-source Breakdown Voltage

12 V

Continuous Drain Current

- 5.4 A

Power Dissipation

2.5 W

Mounting Style

SMD/SMT

Gate Charge Qg

15 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRF7207PBFTR
IRF7207TRPBF
IRF7207TRPBFTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF7207TRPBF

Manufacturer:

Quantity:

20 000

Current page: 1 of 7
Download datasheet (151Kb)

Description

Fifth Generation HEXFET

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance

per silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that

HEXFET power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable

device for use in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

Power dissipation of greater than 0.8W is possible in a

typical PCB mount application.

Absolute Maximum Ratings

Thermal Resistance

www.irf.com

dv/dt

GSM

θJA

@ T

Generation 5 Technology

P-Channel Mosfet

Surface Mount

Available in Tape & Reel

Dynamic dv/dt Rating

Fast Switching

Lead-Free

STG

= 25°C

= 70°C

= 25°C

= 70°C

Drain- Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Gate-to-Source Voltage Single Pulse tp<10µs

Single Pulse Avalanche Energy‚

Peak Diode Recovery dv/dt ƒ

Junction and Storage Temperature Range

Maximum Junction-to-Ambient

Power MOSFETs from

Parameter

…

@ -4.5V

Top View

Typ.

–––

HEXFET

IRF7207PbF

-55 to + 150

Max.

0.02

-5.4

-4.3

± 12

140

-5.0

-20

-43

2.5

1.6

-16

SO-8

Power MOSFET

DS(on)

Max.

DSS

= -20V

= 0.06Ω

PD - 95166

Units

W/°C

°C/W

V/ns

°C

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IRF7207TRPBF Summary of contents

Page 1

... Description ® Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs DSS Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

VGS TOP -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V BOTTOM -2.25V 10 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ...

Page 4

1MHz iss rss oss ds gd 1200 C iss 800 C oss 400 C rss 0 ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL ...

Page 6

SO-8 Package Outline Dimensions are shown in milimeters (inches 0.25 [.010] NOT DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ...

Page 7

SO-8 Tape and Reel Dimensions are shown in milimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS ...

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