SPD50P03L G Infineon Technologies, SPD50P03L G Datasheet - Page 4

MOSFET P-CH 30V 50A TO-252

SPD50P03L G

Manufacturer Part Number
SPD50P03L G
Description
MOSFET P-CH 30V 50A TO-252
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of SPD50P03L G

Package / Case
DPak, TO-252 (4 leads + tab)
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
126nC @ 10V
Input Capacitance (ciss) @ Vds
6880pF @ 25V
Power - Max
150W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.007 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
150000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
104 ns
Rise Time
21.7 ns
Package
DPAK 5pin (TO-252 5pin)
Vds (max)
-30.0 V
Rds (on) (max) (@10v)
7.0 mOhm
Rds (on) (max) (@4.5v)
125.0 mOhm
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000086729
SP000371908
SPD50P03L G
SPD50P03LGINTR
SPD50P03LGXT
Rev. 1.8
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
160
140
120
100
10
10
10
10
80
60
40
20
DS
0
3
2
1
0
C
10
0
); T
)
-1
C
p
=25 °C; D =0
limited by on-state
resistance
40
10
DC
0
80
10 ms
-V
T
C
DS
[°C]
[V]
120
10
100 µs
1 ms
1
10 µs
160
1 µs
200
10
page 4
2
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
=f(t
10
10
10
10
55
50
45
40
35
30
25
20
15
10
C
5
0
-1
-2
1
0
); |V
10
p
0
)
-5
GS
|≥10 V
p
40
/T
10
-4
80
T
t
C
10
p
[°C]
[s]
-3
single pulse
120
SPD50P03L G
0.05
0.02
0.01
0.5
0.2
0.1
10
160
-2
2008-07-10
200
10
-1

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