IRF7726TRPBF International Rectifier, IRF7726TRPBF Datasheet - Page 8

• Manufacturer Part Number: IRF7726TRPBF
• Description: MOSFET P-CH 30V 7A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7726TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 69nC @ 10V
• Input Capacitance (ciss) @ Vds: 2204pF @ 25V
• Power - Max: 1.79W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -7A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 26mohm
• Rds(on) Test Voltage Vgs: -10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 40 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 7 A
• Power Dissipation: 1.79 W
• Gate Charge Qg: 46 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7726TRPBF; IRF7726TRPBFTR

IRF7726PbF
Re-Applied
Voltage
8
Reverse
Recovery
Current
+
-
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
•
•
•
Diode Recovery
Current
dv/dt
Forward Drop
•
•
•
di/dt
D =
-
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
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