IRF7726TRPBF International Rectifier, IRF7726TRPBF Datasheet

MOSFET P-CH 30V 7A MICRO8

IRF7726TRPBF

Manufacturer Part Number
IRF7726TRPBF
Description
MOSFET P-CH 30V 7A MICRO8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7726TRPBF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
26 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
69nC @ 10V
Input Capacitance (ciss) @ Vds
2204pF @ 25V
Power - Max
1.79W
Mounting Type
Surface Mount
Package / Case
Micro8™
Transistor Polarity
P Channel
Continuous Drain Current Id
-7A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
26mohm
Rds(on) Test Voltage Vgs
-10V
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
40 mOhms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 7 A
Power Dissipation
1.79 W
Gate Charge Qg
46 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7726TRPBF
IRF7726TRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7726TRPBF
Manufacturer:
IR
Quantity:
20 000
Thermal Resistance
l
l
l
l
l
l
Absolute Maximum Ratings
Description
www.irf.com
HEXFET
fier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the ruggedized device design,
that International Rectifier is well known for, provides
the designer with an extremely efficient and reliable
device for battery and load management.
The new Micro8 package, with half the footprint area
of the standard SO-8, provides the smallest footprint
available in an SOIC outline. This makes the Micro8
an ideal device for applications where printed circuit
board space is at a premium. The low profile (<1.2mm)
of the Micro8 will allow it to fit easily into extremely thin
application environments such as portable electronics
and PCMCIA cards.
V
I
I
I
P
P
V
T
R
D
D
DM
J
DS
D
D
GS
θJA
@ T
@ T
, T
P-Channel MOSFET
Ultra Low On-Resistance
Very Small SOIC Package
Low Profile (< 1.2mm)
Available in Tape & Reel
Lead-Free
@T
@T
STG
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
®
Power MOSFETs from International Recti-
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Linear Derating Factor
Gate-to-Source Voltage
Parameter
Parameter

GS
GS
ƒ
ƒ
ƒ
@ -10V
@ -10V
G
S
S
S
V
-30V
DSS
1
2
3
4
Top View
HEXFET
0.040@V
0.026@V
8
7
6
5
IRF7726PbF
R
-55 to +150
Max.
DS(on)
70
D
D
D
D
Max.
A
1.79
1.14
0.01
-7.0
-5.7
-30
-28
±20
®
GS
GS
Power MOSFET
max
= -4.5V
= -10V
MICRO-8
PD -95992
-
-
7.0A
6.0A
Units
Units
I
02/22/05
W/°C
°C/W
D
°C
W
W
V
A
V
1

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IRF7726TRPBF Summary of contents

Page 1

... This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device for battery and load management. The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline ...

Page 2

IRF7726PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

Page 3

PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 ° 150 ° ...

Page 4

IRF7726PbF 3200 1MHz iss 2800 rss oss ds gd 2400 C iss 2000 1600 1200 800 C ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 ...

Page 6

IRF7726PbF 0.070 0.060 0.050 0.040 -7.0A 0.030 0.020 0.010 2.0 3.0 4.0 5.0 6.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge ...

Page 7

Temperature ( °C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 150 120 -250µ 100 125 150 ...

Page 8

IRF7726PbF + - + - • • • Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery Body Diode Forward Current D.U.T. V Waveform DS Re-Applied Voltage Body Diode Inductor Curent Ripple ≤ • • • ...

Page 9

Micro8 Package Outline Dimensions are shown in milimeters (inches 0.25 (.010 ...

Page 10

IRF7726PbF Micro8 Tape & Reel Information Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 2. CONTROLLING DIMENSION : MILLIMETER. 330.00 (12.992) MAX. NOTES ...

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