IRF7324D1TRPBF International Rectifier, IRF7324D1TRPBF Datasheet - Page 5
![MOSFET P-CH 20V 2.2A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7324D1TRPBF
Manufacturer Part Number
IRF7324D1TRPBF
Description
MOSFET P-CH 20V 2.2A 8-SOIC
Manufacturer
International Rectifier
Series
FETKY™r
Datasheet
1.IRF7324D1TRPBF.pdf
(8 pages)
Specifications of IRF7324D1TRPBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
270 mOhm @ 1.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.2A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
7.8nC @ 4.5V
Input Capacitance (ciss) @ Vds
260pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
270 mOhms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
- 2.2 A
Power Dissipation
2 W
Mounting Style
SMD/SMT
Gate Charge Qg
5.2 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7324D1PBFTR
IRF7324D1TRPBF
IRF7324D1TRPBFTR
IRF7324D1TRPBF
IRF7324D1TRPBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7324D1TRPBF
Manufacturer:
International Rectifier
Quantity:
25 612
www.irf.com
100
0.1
10
600
500
400
300
200
100
0.0001
1
0
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
(THERMAL RESPONSE)
0.001
Ciss
Coss
Crss
SINGLE PULSE
f = 1 MHZ
10
Power Mosfet Characteristics
0.01
t , Rectangular Pulse Duration (sec)
1
100
0.1
12
10
8
6
4
2
0
0
I D = -2.2A
1. Duty factor D = t / t
2. Peak T = P
Notes:
2
1
Q G Total Gate Charge (nC)
J
V DS = -16V
VDS= -10V
4
IRF7324D1PbF
DM
x Z
1
6
thJA
P
2
10
DM
+ T
8
A
t
1
t
2
10
5
100
12