IRF7324D1TRPBF International Rectifier, IRF7324D1TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7324D1TRPBF
• Description: MOSFET P-CH 20V 2.2A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7324D1TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 7.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 260pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 270 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 2.2 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 5.2 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7324D1PBFTR; IRF7324D1TRPBF; IRF7324D1TRPBFTR

IRF7324D1PbF
BV
R
V
I
I
gfs
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
I
I
V
I
Ct
dV/dt
MOSFET Electrical Characteristics @ T
MOSFET Source-Drain Ratings and Characteristics
Schottky Diode Maximum Ratings
Schottky Diode Electrical Specifications
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
F(av)
SM
RM
DS(on)
GS(th)
iss
oss
rss
SD
FM
g
gs
gd
rr
2
DSS
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Max. Average Forward current
Max.Peak one cycle Non-repetitive
Surge Current
Max. Forward Voltage Drop
Max. Reverse Leakage Current
Max. Junction Capacitance
Max. Voltage Rate of Charge
Parameter
Parameter
Parameter
Parameter
Max. Units
Max. Units
Min. Typ. Max. Units
-0.70
Min. Typ. Max. Units
3600
0.50
0.62
0.39
0.57
0.05
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
120
–––
–––
-20
2.4
1.7
1.2
J
11
10
92
= 25°C (unless otherwise specified)
0.155 0.270
0.260 0.400
V/µs Rated V
0.88
–––
–––
–––
–––
–––
–––
–––
260
140
–––
–––
–––
5.2
2.5
7.6
mA
pF
10
12
11
70
26
24
A
V
5µs sine or 3µs Rect. Pulse
10ms sine or 6ms Rect. Pulse
50% Duty Cycle Rectangular Wave, T
I
I
I
I
V
V
F
F
F
F
-100
-1.0
-1.2
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-2.2
R
R
-25
7.8
-22
39
36
= 1.0A, T
= 2.0A, T
= 1.0A, T
= 2.0A, T
= 20V
= 5Vdc (100kHz to 1MHz) 25°C
R
µA
nA
nC
nC
pF
ns
ns
V
Ω
V
S
V
J
J
J
J
= 25°C
= 25°C
= 125°C
= 125°C
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
GS
DD
DD
GS
DS
G
D
= -2.2A
= -2.2A
= 25°C, I
= 25°C, I
= 4.5Ω
= 6.0Ω
= V
= -16V, V
= -16V, V
= -16V, I
= -15V
= 0V, I
= -4.5V, I
= -2.7V, I
= -12V
= 12V
= -4.5V
= -16V
= -10V, V
= 0V
Conditions
Conditions
GS
, I
D
Conditions
Conditions
D
S
F
= -250µA
D
= -250µA
D
D
= -2.2A, V
GS
GS
GS
= -2.2A, V
= -2.2A
= -1.2A
= -0.6A
= 0V
= 0V, T
= -4.5V
Following any rated
www.irf.com
with VRRM applied
load condition &
A
GS
DD
J
T
T
T
= 25°C
A
J
J
= 125°C
= -10V
= 25°C
= 125°C
= 70°C
= 0V