ZVN3320ASTOA Diodes Zetex, ZVN3320ASTOA Datasheet - Page 32

• Manufacturer Part Number: ZVN3320ASTOA
• Description: MOSFET N-CHAN 200V TO92-3
• Manufacturer: Diodes Zetex

Specifications of ZVN3320ASTOA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 Ohm @ 100mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 100mA
• Vgs(th) (max) @ Id: 3V @ 1mA
• Input Capacitance (ciss) @ Vds: 45pF @ 25V
• Power - Max: 625mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: ZVN3320ASTOA; ZVN3320ASTOATR

Gate drive transistors
*Indicative relative size
*
Part number
ZXGD3001E6
ZXGD3002E6
ZXGD3003E6
ZXGD3004E6
Fast switching emitter-follower
configuration
SOT23-6 package
Optimised pin-out to ease board
layout and minimize trace
inductance
Separate emitters for independent
control of rise and fall time
GND
V
IN
CC
1
SOT23-6
Max
V
12
20
40
40
(T6)
V
IN
SOURCE
IN
SINK
2
Max
V
12
20
40
40
V
CC
I
@ I
source
4.2
2.2
1.6
1.9
A
IN
=
10mA
I
2.2
2.0
1.4
1.9
sink
A
Low input current requirement
No latch up
No shoot through
Near zero quiescent and output
leakage current
Input
I
sinkPK
Max
A
9
9
5
8
Max
1.0
1.0
1.0
1.0
I
A
32
IN
IN
IN
Gate Driver Switching Times (typ)
t
1.25
1
2
d(rise)
1.3
1.8
1.1
ns
GND
ZXGD3x
V
13.4
7.3
8.3
8.9
ns
t
CC
r
t
0.95
d(fall)
1.6
1.7
ns
SOURCE
3
SINK
10.8
12.4
8.9
ns
11
t
f
V
C
V
V
R
V
V
V
R
R
R
R
C
V
C
C
IN
R
V
R
R
Condition
L
CC
CC
L
CC
IN
IN
CC
S
S
S
S
L
L
L
L
IN
L
L
= 1.5nF,
= 0.1Ω,
= 12.5V,
= 1nF,
= 25Ω
= 1nF,
= 25Ω
= 1nF,
= 25Ω
= 25Ω
= 1Ω,
= 1Ω,
= 10V,
= 1Ω,
= 10V,
V
= 12V,
= 12V,
= 15V,
@
= 6V,
= 8V,
S
Package
SOT23-6
SOT23-6
SOT23-6
SOT23-6
(T6)
(T6)
(T6)
(T6)