ZVN3320ASTOA Diodes Zetex, ZVN3320ASTOA Datasheet - Page 25

• Manufacturer Part Number: ZVN3320ASTOA
• Description: MOSFET N-CHAN 200V TO92-3
• Manufacturer: Diodes Zetex

Specifications of ZVN3320ASTOA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 Ohm @ 100mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 100mA
• Vgs(th) (max) @ Id: 3V @ 1mA
• Input Capacitance (ciss) @ Vds: 45pF @ 25V
• Power - Max: 625mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: ZVN3320ASTOA; ZVN3320ASTOATR

PNP transistors from 120 to 220V
* Advance information
*Indicative relative size
*
Part number
FZT955
ZXTP2014G
ZX5T955G
ZXTP2014Z
ZX5T955Z
ZTX955
ZXTP23140BFH
ZXTP25140BFH
FZT795A
ZTX795A
FZT755
FMMT555
ZXTP5401FL
ZXTP5401Z
ZXTP5401G
FCX555
FZT956
ZXTP03200BG*
ZTX956
FZT796A
ZTX796A
FCX596
FMMT596
ZXTP5401EFL*
ZXTP5401EZ*
ZXTP5401EG*
C
SOT223
(T1)
C
B
E
V
-140
-140
-140
-140
-140
-140
-140
-140
-140
-140
-150
-150
-150
-150
-150
-180
-200
-200
-200
-200
-200
-200
-200
-220
-220
-220
CEO
V
C
SOT89
-2.5
-0.5
-0.5
-0.6
-0.6
-0.6
-0.7
-0.5
-0.5
-0.3
-0.3
-0.6
-0.6
-0.6
-4
-4
-4
-3
-3
-3
-1
-1
-1
-2
-2
-2
I
A
C
(T1)
1.25
1.25
0.35
0.35
C
B
E
2.1
2.1
1.2
0.5
1.2
1.5
1.2
0.5
1.2
P
W
3
3
3
2
1
2
2
3
3
2
1
1
2
D
Min.
100
100
100
100
100
100
100
100
250
250
100
100
100
100
100
250
250
100
100
100
75
45
45
45
45
75
40
20
50
50
60
60
60
50
35
50
85
85
C
SOT23
Max.
300
300
300
300
300
300
300
300
300
300
240
240
240
300
300
300
300
300
300
300
300
300
h
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
FE
(T1)
E
B
-0.01
-0.01
-0.01
-0.01
-0.01
-0.25
-0.25
-0.01
-0.01
-0.01
@ I
-0.5
-2.5
-0.2
-0.2
-0.5
-0.3
-0.1
-0.3
-0.3
25
-1
-3
-1
-3
-1
-3
-1
-3
-3
-1
-3
-1
-1
-2
-1
-2
-1
-2
A
1
C
Max.
-300
-350
-370
-360
-360
-330
-330
-330
-280
-260
-300
-300
-500
-200
-200
-200
-300
-400
-275
-160
-250
-300
-300
-350
-150
-150
-150
mV
-80
-80
-75
-75
-95
-50
-50
V
-0.01
-0.01
-0.01
-0.25
-0.25
-0.25
-0.05
-0.05
-0.05
@ I
-0.5
-0.5
-0.5
-0.5
-2.5
-0.1
-0.2
-0.2
-0.1
-0.1
-0.1
-0.2
-0.2
CE(sat)
-3
-3
-3
-3
-3
-3
-1
-1
-1
-2
-1
-2
A
C
-300
-300
-300
-300
-300
-300
-100
-250
-100
-200
-400
-100
-400
@ I
mA
-50
-50
-50
-50
-10
-10
-10
-25
-10
-20
-20
-25
-25
-5
-5
-1
-1
-1
-5
-5
-5
B
MHz
110
120
120
120
120
110
130
100
100
100
100
100
100
100
100
110
120
110
100
100
150
150
100
100
100
75
f
T
R
180
120
CE(sat)
mΩ
92
85
85
76
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Package
SOT223
SOT223
SOT223
SOT89
SOT89
E-Line
SOT23
SOT23
SOT223
E-Line
SOT223
SOT23
SOT23
SOT223
SOT89
SOT89
SOT223
SOT223
E-Line
SOT223
E-Line
SOT89
SOT23
SOT23
SOT223
SOT89
(T1)
(T1)
(T1)
(T1)
E-line
(T1)
(T1)
(T1)
(T1)
(T1)
(T1)
(T1)
(T1)
(T1)
(T1)
(T1)
(T1)
Rounded
C
(T1)
(T1)
(T1)
(T1)
(T1)
(T1)
(T1)
(T1)
(T1)
(T1)
face
B E
(T1)
1.0