AO4403 Alpha & Omega Semiconductor Inc, AO4403 Datasheet - Page 3

MOSFET P-CH -30V -6.1A 8-SOIC

AO4403

Manufacturer Part Number
AO4403
Description
MOSFET P-CH -30V -6.1A 8-SOIC
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AO4403

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
46 mOhm @ 6.1A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.1A
Vgs(th) (max) @ Id
1.3V @ 250µA
Gate Charge (qg) @ Vgs
11.3nC @ 4.5V
Input Capacitance (ciss) @ Vds
1128pF @ 15V
Power - Max
3W
Mounting Type
Surface Mount
Package / Case
8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1019-2

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AO4403
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
25
20
15
10
80
60
40
20
5
0
150
130
110
90
70
50
30
10
0.00
0
Figure 3: On-Resistance vs. Drain Current and Gate
0
-10V
Figure 5: On-Resistance vs. Gate-Source Voltage
2.00
1
Fig 1: On-Region Characteristics
V
2
GS
=-2.5V
25°C
4.00
2
-V
-4.5
Voltage
4
-V
DS
-I
D
GS
(Volts)
(A)
(Volts)
6.00
V
V
GS
3
GS
I
-3V
=-2V
V
D
6
=-4.5V
=-5A
-2.5V
GS
125°C
=-10V
8.00
4
8
10.00
5
10
10
1.6
1.4
1.2
0.8
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
8
6
4
2
0
1
0
0
Figure 4: On-Resistance vs. Junction Temperature
0.0
25
0.5
125°C
Figure 2: Transfer Characteristics
Figure 6: Body-Diode Characteristics
0.2
50
1
V
Temperature (°C)
V
DS
I
D
V
GS
=-5V
0.4
=-5
-V
GS
75
=-10V
GS
=-4.5V
-V
1.5
(Volts)
125°C
SD
100
0.6
(Volts)
25°C
V
2
GS
25°C
I
125
D
0.8
=-2.5V
=-1A
2.5
150
www.aosmd.com
1.0
175
3
1.2

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