AO4403 Alpha & Omega Semiconductor Inc, AO4403 Datasheet
AO4403
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AO4403 Summary of contents
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... AO4403 P-Channel Enhancement Mode Field Effect Transistor General Description The AO4403/L uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance ...
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... AO4403 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
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... AO4403 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 -10V -4 (Volts) DS Fig 1: On-Region Characteristics 120 100 V =-2. 0.00 2.00 4.00 -I (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 150 130 110 25° (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd -3V 6 -2.5V ...
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... AO4403 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =-15V (nC) g Figure 7: Gate-Charge Characteristics 100.0 T =150°C J(Max) T =25° DS(ON) 10.0 limited 0.1s 1.0 1s 10s DC 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA J, =40°C/W θJA 1 0.1 Single Pulse 0 ...