NTD3055-094T4G ON Semiconductor, NTD3055-094T4G Datasheet - Page 3

• Manufacturer Part Number: NTD3055-094T4G
• Description: MOSFET N-CH 60V 12A DPAK
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTD3055-094T4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 94 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 450pF @ 25V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.094 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 6.7 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A
• Power Dissipation: 48000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.094Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 12A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTD3055-094T4GOSTR

0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
24
16
12
20
1.8
1.6
1.4
1.2
0.8
0.6
8
4
0
1
2
0
−50
0
0
V
−25
8 V
V
I
V
D
DS
Figure 1. On−Region Characteristics
Figure 5. On−Resistance Variation with
GS
GS
V
= 6 A
9 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
GS
= 10 V
= 10 V
4
Figure 3. On−Resistance versus
1
T
J
= 10 V
0
, JUNCTION TEMPERATURE (°C)
I
D
Gate−to−Source Voltage
, DRAIN CURRENT (AMPS)
25
8
2
Temperature
50
7 V
12
75
3
T
T
T
J
J
J
= 100°C
= 25°C
= −55°C
100
16
125
4
20
http://onsemi.com
150
6.5 V
5.5 V
4.5 V
6 V
5 V
24
175
5
3
1000
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
100
10
24
20
16
12
1
8
4
0
0
3
0
0
Figure 4. On−Resistance versus Drain Current
V
Figure 6. Drain−to−Source Leakage Current
T
V
GS
J
3.5
V
DS
V
= 100°C
V
GS
DS
= 0 V
GS
≥ 10 V
10
T
Figure 2. Transfer Characteristics
= 15 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
4
, GATE−TO−SOURCE VOLTAGE (VOLTS)
J
4
= 25°C
I
D
, DRAIN CURRENT (AMPS)
4.5
20
and Gate Voltage
8
T
versus Voltage
J
= −55°C
5
T
T
J
J
= 100°C
= 150°C
5.5
12
30
T
T
6
T
J
J
J
= 100°C
= −55°C
= 25°C
16
40
6.5
7
20
50
7.5
24
60
8