TPCF8104(TE85L,F,M Toshiba, TPCF8104(TE85L,F,M Datasheet - Page 6

• Manufacturer Part Number: TPCF8104(TE85L,F,M
• Description: MOSFET P-CH -30V -6A VS-8
• Manufacturer: Toshiba

Specifications of TPCF8104(TE85L,F,M

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 1760pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: VS-8 (2-3U1A)
• Configuration: Single Hex Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.028 Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPCF8104(TE85L,F); TPCF8104FMTR; TPCF8104FTR; TPCF8104FTR

−100
−0.1
−10
−1
−0.1
*:Single pulse
Curves must be derated linearly
I D max (pulse)*
with increase in temperature
Ta = 25°C
Drain-source voltage
Safe operating area
1000
100
0.1
−1
10
1
1 m
10 ms*
V DSS max
−10
V DS (V)
10 m
1 ms*
−100
100 m
Device mounted on a glass-epoxy board (b) (Note 2b)
Pulse width t w (s)
r
th
Device mounted on a glass-epoxy board (a) (Note 2a)
6
– t
1
w
10
100
1000
TPCF8104
2006-11-16