TPCF8104(TE85L,F,M Toshiba, TPCF8104(TE85L,F,M Datasheet - Page 3
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TPCF8104(TE85L,F,M
Manufacturer Part Number
TPCF8104(TE85L,F,M
Description
MOSFET P-CH -30V -6A VS-8
Manufacturer
Toshiba
Datasheet
1.TPCF8104TE85LFM.pdf
(7 pages)
Specifications of TPCF8104(TE85L,F,M
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
28 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
34nC @ 10V
Input Capacitance (ciss) @ Vds
1760pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
VS-8 (2-3U1A)
Configuration
Single Hex Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.028 Ohms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TPCF8104(TE85L,F)
TPCF8104FMTR
TPCF8104FTR
TPCF8104FTR
TPCF8104FMTR
TPCF8104FTR
TPCF8104FTR
Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge1
Gate-drain (“miller”) charge
Drain reverse
current
Forward voltage (diode)
Characteristics
Characteristics
Pulse (Note 1)
Rise time
Turn-on time
Fall time
Turn-off time
(Ta = 25°C)
Symbol
V
I
DRP
DSF
V
V
R
Symbol
(BR) DSS
(BR) DSX
DS (ON)
Q
I
I
C
|Y
C
C
Q
GSS
DSS
V
t
t
Q
oss
on
off
gs1
rss
t
t
iss
gd
I
th
fs
r
f
g
DR
|
= −6.0 A, V
V
V
I
I
V
V
V
V
V
Duty < = 1%, t
V
I
V
D
D
D
GS
DS
DS
GS
GS
DS
DS
DD
GS
= −10 mA, V
= −10 mA, V
= −6.0 A
3
−10 V
(Ta = 25°C)
= −30 V, V
= −10 V, I
= −10 V, I
= −10 V, V
= ±16 V, V
= −4.5 V, I
= −10 V, I
∼ − −24 V, V
0 V
Test Condition
GS
= 0 V
Test Condition
w
⎯
D
D
= 10 µs
D
GS
GS
D
GS
GS
DS
GS
= −1mA
= −3.0A
= −3.0A
= −3.0 A
V
= 0 V
= 20 V
I
= 0 V
= 0 V
= 0 V, f = 1 MHz
= −10V,
D
DD
= −3.0 A
∼ − −15 V
V
OUT
−0.8
Min
Min
−30
−15
4.8
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1760
Typ.
Typ.
200
210
9.6
2.8
4.7
7.2
⎯
⎯
⎯
⎯
⎯
29
21
12
22
90
34
⎯
⎯
TPCF8104
2006-11-16
Max
−2.0
Max
−24
±10
−10
1.2
38
28
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
µA
µA
pF
nC
ns
V
V
S
A
V