SPD08N50C3 Infineon Technologies, SPD08N50C3 Datasheet - Page 3

• Manufacturer Part Number: SPD08N50C3
• Description: MOSFET N-CH 560V 7.6A DPAK
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPD08N50C3

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V
• Drain To Source Voltage (vdss): 560V
• Current - Continuous Drain (id) @ 25° C: 7.6A
• Vgs(th) (max) @ Id: 3.9V @ 350µA
• Gate Charge (qg) @ Vgs: 32nC @ 10V
• Input Capacitance (ciss) @ Vds: 750pF @ 25V
• Power - Max: 83W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.6 A
• Power Dissipation: 83000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 7.6A
• Drain Source Voltage Vds: 560V
• On Resistance Rds(on): 600mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000013835; SP000307395; SPD08N50C3INTR; SPD08N50C3XT; SPD08N50C3XTINTR; SPD08N50C3XTINTR

Rev. 2.5
Electrical Characteristics , at T
Parameter
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
energy related
Effective output capacitance,
time related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
1 Repetitve avalanche causes additional power losses that can be calculated as P
2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3 Soldering temperature for TO-263: 220°C, reflow
4 C
5 C
6 I
Identical low-side and high-side switch.
SD
o(er)
o(tr)
<=I
is a fixed capacitance that gives the same charging time as C
is a fixed capacitance that gives the same stored energy as C
D
, di/dt<=400A/us, V
DClink
=400V, V
4)
5)
Symbol
g
C
C
C
C
C
t
t
t
t
Q
Q
Q
V
d(on)
r
d(off)
f
j
fs
(plateau)
iss
oss
rss
o(er)
o(tr)
gs
gd
g
= 25 °C, unless otherwise specified
peak
<V
Page 3
BR, DSS
V
I
V
f=1MHz
V
V
V
I
V
V
V
V
D
D
DS
GS
GS
DS
DD
DD
DD
GS
DD
=4.6A
=7.6A, R
=0V to 400V
=0V, V
=0V,
=400V, V
=400V, I
=400V, I
=0 to 10V
=400V, I
2*I
Conditions
, T
D
j
*R
<T
G
DS
DS(on)max
=12
j,max
D
D
D
GS
=25V,
=7.6A
=7.6A,
=7.6A
=0/10V,
.
oss
oss
while V
while V
,
min.
DS
DS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AV
is rising from 0 to 80% V
is rising from 0 to 80% V
=E
Values
AR
typ.
750
350
12
56
30
60
17
32
*f.
3
5
6
6
5
7
SPD08N50C3
2008-04-11
max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
nC
V
Unit
S
pF
pF
ns
DSS
DSS
.
.