NTHS5404T1G ON Semiconductor, NTHS5404T1G Datasheet - Page 2

• Manufacturer Part Number: NTHS5404T1G
• Description: MOSFET N-CH 20V 5.2A CHIPFET
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTHS5404T1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 5.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.2A
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.03Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Drain Current (max): 5.2A
• Power Dissipation: 1.3W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: ChipFET
• Configuration: Single Hex Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.025 Ohms
• Forward Transconductance Gfs (max / Min): 20 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 7.2 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTHS5404T1GOS; NTHS5404T1GOS; NTHS5404T1GOSTR

2. Surface Mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Guaranteed by design, not subject to production testing.
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Static
Dynamic (Note 4)
DRAIN−SOURCE DIODE CHARACTERISTICS
Gate Threshold Voltage
Gate−Body Leakage
Zero Gate Voltage Drain Current
On−State Drain Current (Note 3)
Drain−Source On−State Resistance (Note 3)
Forward Transconductance (Note 3)
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage (Note 3)
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Time
Maximum Junction−to−Ambient (Note 2)
Maximum Junction−to−Foot (Drain)
t v 5 sec
Steady State
Steady State
Characteristic
Characteristic
(T
J
= 25 C unless otherwise noted)
Symbol
V
r
I
DS(on)
t
t
I
I
Q
Q
V
GS(th)
D(on)
d(on)
d(off)
GSS
DSS
Q
g
Q
t
t
t
t
t
SD
GS
GD
rr
a
b
fs
(
r
f
G
rr
)
http://onsemi.com
NTHS5404
V
I
I
V
V
D
D
V
V
DS
V
V
V
DS
V
V
V
V
DS
DS
V
DS
^ 1 0 A V
^ 1.0 A, V
GS
GS
DS
DD
DS
GS
GS
2
GS
di
w 5.0 V, V
= 10 V, V
Test Condition
= 0 V, V
= V
= 16 V, V
S
= 16 V, V
= 4.5 V, I
= 2.5 V, I
= 10 V, R
= 10 V, I
= 0 V, I
= 0 V, I
= 0 V, I
/dt = 100 A/ms
T
I
I
Symbol
R
D
D
GS
J
R
R
G
G
= 5.2 A
= 5.2 A
= 85 C
qJA
qJF
, I
= 6 W
GS
GEN
GEN
S
S
D
GS
S
D
GS
D
D
GS
= 5.2 A,
= 5.2 A,
GS
= 250 mA
L
= 5.2 A
= "12 V
= 5.2 A
= 5.2 A
= 4.3 A
= 4.5 V,
= 10 W
= 4 5 V
= 4.5 V,
= 0 V,
= 4.5 V
= 0 V
Typ
40
80
15
Min
0.6
20
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
0.025
0.038
20.9
10.2
10.6
Typ
50
95
20
2.4
3.2
8.0
7.0
0.8
20
12
50
28
11
−
−
−
−
−
"100
0.030
0.045
Max
1.0
5.0
1.2
18
15
15
60
40
−
−
−
−
−
−
−
−
−
Unit
C/W
C/W
Unit
nA
mA
nC
nC
ns
ns
W
V
A
S
V