NTHS5404T1G ON Semiconductor, NTHS5404T1G Datasheet

NTHS5404T1G

Manufacturer Part Number

NTHS5404T1G

Description

MOSFET N-CH 20V 5.2A CHIPFET

Manufacturer

ON Semiconductor

Type

Power MOSFETr

Datasheets

1.NTHS5404T1G.pdf (6 pages)

2.NTHS5404T1G.pdf (6 pages)

Specifications of NTHS5404T1G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

30 mOhm @ 5.2A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

5.2A

Vgs(th) (max) @ Id

600mV @ 250µA

Gate Charge (qg) @ Vgs

18nC @ 4.5V

Power - Max

1.3W

Mounting Type

Surface Mount

Package / Case

8-ChipFET™

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.03Ohm

Drain-source On-volt

20V

Gate-source Voltage (max)

±12V

Drain Current (max)

5.2A

Power Dissipation

1.3W

Output Power (max)

Not RequiredW

Frequency (max)

Not RequiredMHz

Noise Figure

Not RequireddB

Power Gain

Not RequireddB

Drain Efficiency

Not Required%

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Package Type

ChipFET

Configuration

Single Hex Drain

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.025 Ohms

Forward Transconductance Gfs (max / Min)

20 S

Drain-source Breakdown Voltage

20 V

Gate-source Breakdown Voltage

+/- 12 V

Continuous Drain Current

7.2 A

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

NTHS5404T1GOS
NTHS5404T1GOS
NTHS5404T1GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTHS5404T1G

Manufacturer:

Quantity:

1 670

Company:

Meier Automation Equipment Co., Limited

Part Number:

NTHS5404T1G

Manufacturer:

ON/安森美

Quantity:

20 000

Company:

H&T Electronics

Part Number:

NTHS5404T1G

Quantity:

6 900

Current page: 1 of 6
Download datasheet (59Kb)

NTHS5404

Power MOSFET

20 V, 7.2 A, N−Channel ChipFETE

Features

Applications

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Surface Mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq

MAXIMUM RATINGS

February, 2005 − Rev. 4

Drain−Source Voltage

Gate−Source Voltage

Continuous Drain Current

Pulsed Drain Current

Continuous Source Current

Maximum Power Dissipation

Operating Junction and Storage

Cellular and Cordless Telephones and PCMCIA Cards

Low R

Logic Level Gate Drive

Miniature ChipFET Surface Mount Package Saves Board Space

Pb−Free Package is Available

Power Management in Portable and Battery−Powered Products; i.e.,

Semiconductor Components Industries, LLC, 2005

[1 oz] including traces).

(Diode Conduction) (Note 1)

(Note 1)

Temperature Range

= 150 C) (Note 1)

= 25 C

= 85 C

= 25 C

= 85 C

DS(on)

Rating

for Higher Efficiency

= 25 C unless otherwise noted)

Symbol

, T

stg

5 Secs

7.2

5.2

7.2

2.5

1.3

−55 to +150

"12

"20

Steady

State

5.2

3.8

5.2

1.3

0.7

Unit

†For information on tape and reel specifications,

NTHS5404T1

NTHS5404T1G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

CONNECTIONS

Device

(BR)DSS

20 V

ORDERING INFORMATION

A2 = Specific Device Code

M = Month Code

http://onsemi.com

N−Channel MOSFET

25 mW @ 4.5 V

(Pb−Free)

Package

ChipFET

DS(on)

Publication Order Number:

TYP

CASE 1206A

3000/Tape & Reel

ChipFET

STYLE 1

MARKING

DIAGRAM

NTHS5404T1/D

Shipping

7.2 A

MAX

†

Related parts for NTHS5404T1G

NTHS5404T1G Summary of contents

Page 1

... M = Month Code ORDERING INFORMATION Device Package Shipping NTHS5404T1 ChipFET 3000/Tape & Reel NTHS5404T1G ChipFET 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: ...

Page 2

THERMAL CHARACTERISTICS Characteristic Maximum Junction−to−Ambient (Note sec Steady State Maximum Junction−to−Foot (Drain) Steady State ELECTRICAL CHARACTERISTICS Characteristic Static Gate Threshold Voltage Gate−Body Leakage Zero Gate Voltage Drain Current On−State Drain Current (Note 3) Drain−Source On−State Resistance ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 12 1 − 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.06 ...

Page 4

TYPICAL ELECTRICAL CHARACTERISTICS iss 1800 1500 C 1200 rss 900 600 C 300 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure ...

Page 5

... Figure 12. Basic *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. The basic pad layout with dimensions is shown in Figure 12. This is sufficient for low power dissipation MOSFET applications, but power semiconductor performance requires a greater copper pad area, particularly for the drain leads ...

Page 6

... J 0.05 (0.002) N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. ...

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